Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contacts

Wada, Yoshinori; Chino, Ken-ichi

doi:10.1016/0038-1101(83)90171-5

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High-temperature Storage Test (Htst)1

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1984

2000

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Cited by 17 publications

(2 citation statements)

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“…We assessed the Schottky characteristics, including I dss fluctuation of FETs A, B, C with HTSTs between 200 and 250 °C, and confirmed the excellent stability of the Al Schottky barrier [4,5]. We confirmed that the degradation of AuGe/Pt could be neglected in HTRF, because the degradation of ohmic AuGe/Pt occurred later than that of EM.…”

Section: High-temperature Storage Test (Htst)supporting

confidence: 59%

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Reliability improvement of Al-gate power GaAs-MESFET

Kuroda

2000

Electron. Comm. Jpn. Pt. II

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Section: High-temperature Storage Test (Htst)supporting

confidence: 59%

“…Some applications of Al for FETs have been reported. For example, the interaction between Al and GaAs is more stable than that between Ti and GaAs [4,5]. Higher EM failure lifetime is reported to have been obtained by Al covered with thin Ti gate finger electrodes than in the case of only Al [6].…”

Section: Introductionmentioning

confidence: 99%

Reliability improvement of Al-gate power GaAs-MESFET

Kuroda

2000

Electron. Comm. Jpn. Pt. II

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Metal–GaAs interaction and contact degradation in microwave MESFETs

Zanoni

Callegari

Canali

et al. 1990

Quality & Reliability Eng

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This work reports and critically reviews failure mechanisms induced by metal-GaAs interaction and contact degradation in low and medium power GaAs MESFETs in the framework of a comprehensive reliability evaluation test plan, performed mainly on commercially purchased devices manufactured by different technologies. The results show that, at least as regards contact degradation phenomena, these technologies have reached sufficient maturity, and significant reliability levels have been achieved even for the most severe application and environments. Devices coming from some suppliers still suffer from reliability problems. such as ‘sinking’ of Au-based gate metallization into the active channel. Al electromigration, Al/GaAs interdiffusion enhanced by high contacts electromigration, surface metal migration and short circuiting of closely spaced electrodes on GaAs with a non-suitable surface preparation and/or passivation. All these failure mechanisms have been identified by means of suitable microanalytical techniques, correlated with device electrical degradation and thoroughly discussed in this paper by comparison with results previously reported in the technical literature

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