Schottky-barrier-height Reduction for n-Si and n-Ge by Insertion of Tungsten Silicide and Germanide Films Chemically Synthesized using Gas-phase Reactions

Fermi-level depinning in Mo/Si junctions by insertion of amorphous Si-rich Mo silicide film formed via gas-phase reactions of MoF6 with SiH4

“…[12][13][14][15] As a result, we demonstrated deposition of MoSi n films using MoF 6 with SiH 4 , and then the feasibility of the Mo/MoSi n /Si junction in terms of the SBH in Schottky diodes. 16) In this article, we further reveal the low effective work function (eWF) of MoSi n film by capacitance −voltage (C−V ) measurements of MOS capacitors.…”

Gas-phase reactions of WF6with SiH4for deposition of WSinfilms free from powder formation

“…22) The WSi n film with n = 12 exhibits particularly useful properties as a contact material for source/drain in Si CMOS: a reduction of the electron Schottky barrier height to 0.32 eV at W/WSi n /n-type Si junctions, excellent barrier properties against Cu diffusion, and an excellent contact hole coverage. [23][24][25] The encapsulated WSi n cluster is a gas-phase product entirely different from the powder formation in that the size n of the formed clusters is uniformly determined by the reaction conditions and does not exceed n = 12, which is the value for the end product. A question still remains as to whether the CPD condition is separated from the power formation conditions.…”

“…As the result, we identified that the three different reaction modes are present; i.e., powder formation, fluorine (F) reduction, and W-atom-encapsulated Si n (n ⩾ 6) cage cluster synthesis modes. 26) In this article, we further discuss what reaction pathways of WF 6 with SiH 4 are responsible to these three modes. It is also verified by analyses of atomic density and surface morphology of deposited films that the CPD yields dense films with smooth surfaces.…”