Schottky Barrier Height in GaN/AlGaN Heterostructures

Abstract

We present a modified expression for Φ B that takes into account the effect of total polarization and the 2DEG concentration in GaN at the GaN/AlGaN heterointerface through the incorporation of Schottky barrier lowering. Schottky barrier lowering ∆Φ B = S qE πε 4 int , where E int is the electric field in AlGaN at the AlGaN/gate interface and S