Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts

Abstract

In this paper, we demonstrate Schottky barrier height adjustment of Nickel-Germanosilicide (NiSiGe) contact on Si 0.7 Ge 0.3 by controlling the As + implants at the NiSiGe/Si 0.7 Ge 0.3 interface. Various dosage of As + was implanted into both n-and p-type Si 0.7 Ge 0.3 to demonstrate the control of effective barrier height. Electrical characterization shows ohmic contact can be achieved for NiSiGe on n-Si 0.7 Ge 0.3 . We use 2-D XRD to confirm presence of NiSiGe phase and TOF-SIMS to confirm the segregation of As + doping at the contact-semiconductor interface.