Schottky barrier diodes fabricated with metal oxides AgOx/IGZO

Santana, L.A.; Resendiz, L.; Díaz, A.I.; Hernandez-Cuevas, F.J.; Aleman, M.; Hernández‐Como, N.

doi:10.1016/j.mee.2019.111182

Cited by 10 publications

(7 citation statements)

References 31 publications

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“…Introducing of 20% O2 during the sputtering of IGZO after bottom electrode treatment and post-annealing at 200°C were applied to fabricate Schottky diodes with a rectification ratio up to 10 8 and ideality factor of 1.22 [11]. Thermal annealing at 200°C and an oxygen-containing atmosphere were utilized for the fabrication of the AgOx/IGZO Schottky diodes with rectification ratio of 10 9 at ±2 V and an ideality factor of 1.7 [12]. The Pt/IGZO Schottky diodes on flexible plastic substrates operating beyond 2.45 GHz were fabricated by applying UV-ozone treatment and 3% O2 atmosphere during the IGZO sputtering without any thermal annealing process [13].…”

Section: Introductionmentioning

confidence: 99%

Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits

et al. 2020

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Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. In this study, we investigate the combined effect of sputtering conditions of amorphous IGZO (In:Ga:Zn=1:1:1) and postdeposition thermal annealing on the properties of vertical thin-film Pt-IGZO-Cu Schottky diodes, and evaluated the applicability of the fabricated Schottky diodes for low-frequency half-wave rectifier circuits. The change of the oxygen content in the gas mixture from 1.64% to 6.25%, and post-deposition annealing is shown to increase the current rectification ratio from 10 5 to 10 7 at ±1 V, Schottky barrier height from 0.64 eV to 0.75 eV, and the ideality factor from 1.11 to 1.39. Half-wave rectifier circuits based on the fabricated Schottky diodes were simulated using parameters extracted from measured current-voltage and capacitancevoltage characteristics. The half-wave rectifier circuits were realized at 100 kHz and 300 kHz on as-fabricated Schottky diodes with active area of 200 μm × 200 μm, which is relevant for the near-field communication (125 kHz-134 kHz), and provided the output voltage amplitude of 0.87 V for 2 V supply voltage. The simulation results matched with the measurement data, verifying the model accuracy for circuit level simulation. INDEX TERMS amorphous In-Ga-Zn-O, capacitance-voltage characteristics, currentvoltage characteristics, half-wave rectifiers, Schottky diodes, sputtering

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Section: Introductionmentioning

confidence: 99%

Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits

et al. 2020

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“…The values for E D and N D were taken from [ 16 ]. The typical value and the range of W G were determined considering the reported values in [ 18 , 21 ]. The value for W S/D was taken from [ 22 ].…”

Section: Methodsmentioning

confidence: 99%

The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal–Semiconductor Field-Effect Transistors

Kang

Jung

2022

Materials

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We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga2O3 metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of the behavior of such devices. The gate work function significantly affects the reverse bias drain current under the gate-current dominant regime, whereas a gate-source/drain gap larger than 0.1 µm has a negligible effect on the drain current.

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“…Various processes and material optimizations were investigated to obtain a sufficiently oxidized Schottky contact. [17][18][19][20]27,[29][30][31][32][33][34] Moreover, the Schottky barrier can be deteriorated by the external dopant-induced defects, [31] such as those defects related to hydrogen (H) and water (H 2 O) from the H-containing processes or ambient humidity. Although the hydrogenation of AOS may benefit the rectification performance of SBDs by reducing the on-state resistance (R on ), [33] it is also of high possibility to bring about instabilities due to the H-related defects [35,36] and the thermal instability nature of H dopants.…”

Section: Doi: 101002/aelm202200280mentioning

confidence: 99%

Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation

Zhou

Pan

Zheng

et al. 2022

Adv Elect Materials

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The low‐temperature‐processed amorphous oxide semiconductors (AOSs) exhibit remarkable potentials in large‐area, flexible, and hybrid‐integrated electronics, while the performance and stability of AOS devices highly depend on the proper manipulation of abundant native defects in AOS, especially for AOS Schottky barrier diode (SBD) with the naturally defective metal–semiconductor interface. Here, a hydrogenated‐InGaZnO SBD with a hydrogen‐rich passivation layer (PL) is reported. With the hydrogenation effectively suppressing interface defects and meanwhile donating electrons, a near‐ideal Schottky contact and more‐conductive drift region are simultaneously achieved, as proven by the perfect ideality factor of 1.08, a Schottky barrier height of 0.87 eV, a high rectification ratio ≈4.5 × 108. Moreover, such sophisticated hydrogenation is self‐stabilized by the bilayer structure of PL, contributing to the record‐high stabilities under harsh environmental and electrical stresses.

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Schottky barrier diodes fabricated with metal oxides AgOx/IGZO

Cited by 10 publications

References 31 publications

Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits

Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits

The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal–Semiconductor Field-Effect Transistors

Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation

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