Abstract:Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane
(BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different
crystallographic characteristics were used for the comparison of the crystallinity effect on the
electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the
SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or
ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain bounda… Show more
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