Scheme design of pulse duration compression in amplification of untraviolet ultrashort pulse laser

Structural, electronic, optical, elastic properties and Born effective charges of monoclinic HfO2from first-principles calculations

“…As a gate dielectric to replace SiO 2 in metal-oxidesemiconductor field-effect transistor (MOSFET), a systematic investigation of the physical and chemical properties of HfO 2 in thin-film (surface and interface) is greatly desired. HfO 2 films have been grown by atomic layer deposition (ALD), [2,10,27,28] electron beam evaporation (e-beam), [2,29] reactive vacuum evaporation, [9] radio-frequency (rf) magnetron sputtering, [11,15] remote plasma-assisted chemical vapor deposition (RPECVD), [30] etc., and their structural, electrical, optical, thermo-mechanical, surface and interfacial properties have been studied. However, some properties, surface and interfacial properties in particular, are not well understood by experiments.…”