Electrostatic confinement of charge carriers in graphene is governed by Klein tunnelling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at p-n junction boundaries 1-5 . Reflection and transmission at these boundaries a ect the quantum interference of electronic waves, enabling the formation of novel quasi-bound states 6-12 . Here we report the use of scanning tunnelling microscopy to map the electronic structure of Dirac fermions confined in quantum dots defined by circular graphene p-n junctions. The quantum dots were fabricated using a technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer 13 . Inside such graphene quantum dots we observe resonances due to quasi-bound states and directly visualize the quantum interference patterns arising from these states. Outside the quantum dots Dirac fermions exhibit Friedel oscillation-like behaviour. Bolstered by a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield insights into the spatial behaviour of electrostatically confined Dirac fermions.Quantum confinement in graphene has previously been accomplished through lithographically patterned structures 14-17 , graphene edges 18 , and chemically synthesized graphene islands [19][20][21][22] . These systems, however, are either too contaminated for direct wavefunction visualization or use metallic substrates that prevent electrostatic gating. Electron confinement in graphene has also been induced through high magnetic fields 23 and supercritical impurities 24 , but these methods are unwieldy for many technological applications. An alternative approach for confining electrons in graphene relies on using electrostatic potentials. However, this is notoriously difficult because Klein tunnelling renders electric potentials transparent to massless Dirac fermions at non-oblique incidence 1-5 . Nevertheless, it has been theoretically predicted that a circular graphene p-n junction can localize Dirac electrons and form quasi-bound quantum dot states 6-11 . A recent tunnelling spectroscopy experiment 12 revealed signatures of electron confinement induced by the electrostatic potential created by a charged scanning tunnelling microscope (STM) tip. However, since the confining potential moves with the STM tip, this method allows neither spatial imaging of the resulting confined modes nor patterning control of the confinement potential.Here we employ a new patterning technique that allows the creation of stationary circular p-n junctions in a graphene layer on top of hexagonal boron nitride (hBN). Figure 1a illustrates how stationary circular graphene p-n junctions are created. We start with a graphene/hBN heterostructure resting on a SiO 2 /Si substrate. The doped Si substrate acts as a global backgate while the hBN layer provides a tunable local embedded gate after being treated by a voltage pulse from an STM tip 13 . To create this embedded gate the STM ...