Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure

Požela, J.; Požela, K.; Jucienė, V.

doi:10.1134/s1063782607090126

Cited by 12 publications

(16 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A large mobility increase coincides with the predicted decrease in the electron-IF phonon scattering rate in the InGaAs QW channels with the inserted InAs barriers [3,5,11,12]. However, the IF phonon scattering rate increases by one order, when the electron energy exceeds the IF phonon energy (30-50 meV) [5,12,14].…”

Section: High-field Electron Drift Velocitymentioning

confidence: 82%

“…However, the IF phonon scattering rate increases by one order, when the electron energy exceeds the IF phonon energy (30-50 meV) [5,12,14]. Hence, a large increase in the scattering rate and, therefore, a large decrease in the mobility due to electron heating by electric field can be predicted.…”

Section: High-field Electron Drift Velocitymentioning

confidence: 99%

“…The other possibility of increasing the electron mobility in a modulation-doped structure is the insertion of thin InAs layers -phonon walls into the InGaAs QW [3,5,11,12]. Experimental study of the possibility of suppressing the electron-PO and -IF phonon scattering rates and, hence, increasing the electron mobility by inserting InAs phonon walls into the InGaAs QW was performed with four structures.…”

Section: Insertion Of Inas Phonon Walls Into the Ingaas Qwmentioning

confidence: 99%

“…The engineering of electron interaction with polar optical (PO) and interface (IF) phonons by inserting thin semiconductor layers into a quantum well (QW), which could reflect PO and IF phonons, is a functional tool for controlling electron transport and photoelectric properties of semiconductor heterostructures [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In particular, it is essential to increase electron mobility in In 0.52 Al 0.48 As/ In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As channels of high electron mobility transistors (HEMTs) that in turn are the basic elements of microwave electronics in the frequency range up to 100 GHz, and are intended for detection and generation of electromagnetic radiation in the terahertz frequency range [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…The thin electron-transparent InAs insert is assumed to be reflecting for PO and IF phonons, i. e. considered as a phonon wall [3,5].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Electron transport in modulation-doped InAlAs/InGaAs/InAlAs and AlGaAs/InGaAs/AlGaAs heterostructures

Požela¹,

Požela²,

Jucienė³

et al. 2011

Lith. J. Phys.

View full text Add to dashboard Cite

The possibilities of enhancing the electron mobility and high-field drift velocity in channels of modulation-doped InAlAs/InGaAs and AlGaAs/InGaAs quantum wells by tuning interaction of electrons with interface phonons are tested and reviewed. A large increase in the mobility is achieved in a novel metamorphic In 0.7 Al 0.3 As/In 0.8 Ga 0.2 As structure with the high InAs content in the InAlAs barrier layer as well as in the Al x Ga 1-x As/In 0.2 Ga 0.8 As structure with the low AlAs content in the AlGaAs barrier layer. An enhancement in the electron mobility by inserting thin InAs layers into the In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As quantum well is obtained. The electron drift velocity saturates at high electric fields of 1.5-5 kV/cm and achieves a maximal value of 2.5 . 10 7 cm/s in the InGaAs quantum well with the thin InAs and GaAs inserts.

show abstract

Section: High-field Electron Drift Velocitymentioning

confidence: 82%

Section: High-field Electron Drift Velocitymentioning

confidence: 99%

Section: Insertion Of Inas Phonon Walls Into the Ingaas Qwmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The thin electron-transparent InAs insert is assumed to be reflecting for PO and IF phonons, i. e. considered as a phonon wall [3,5].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Electron transport in modulation-doped InAlAs/InGaAs/InAlAs and AlGaAs/InGaAs/AlGaAs heterostructures

Požela¹,

Požela²,

Jucienė³

et al. 2011

Lith. J. Phys.

View full text Add to dashboard Cite

show abstract

Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

Požela

Šilėnas

et al. 2012

Appl. Phys. A

View full text Add to dashboard Cite

High electron mobility in strained GaAs nanowires

et al. 2021

View full text Add to dashboard Cite

Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.

show abstract

Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure

Cited by 12 publications

References 9 publications

Electron transport in modulation-doped InAlAs/InGaAs/InAlAs and AlGaAs/InGaAs/AlGaAs heterostructures

Electron transport in modulation-doped InAlAs/InGaAs/InAlAs and AlGaAs/InGaAs/AlGaAs heterostructures

Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

High electron mobility in strained GaAs nanowires

Contact Info

Product

Resources

About