Scattering and Lifetime of Hot Excitons Interacting with LO-Phonons in InBr and InI Polar Semiconductors

Abstract

Scattering probabilities and lifetime for a ªhotº Wannier-Mott exciton which interacts with LO-phonons in InBr and InI polar semiconductors are obtained for T 0. The calculations were performed for exciton states with principal quantum number n 2 in the states l 1, m 0 and l 1, m AE1, when electron and hole effective masses are equal m e m h . The results obtained can be used to explain the special characteristic of secondary radiation emission spectrum measured by In the latter work, the scattering lines show an alterating intensity which can be accounted for only if the electron and hole effective masses are nearly equal. All computation was performed for different scattering probabilities of the excitons, namely: intraband W s , inter-exciton band W 231 , disintegration into the continuous spectrum W d , as well as the lifetime of the exciton in both states. The results show that W s is larger than W 231 , even in the case m e m h , for a wide range of kinetic energy of the excitons. A comparison of these results with those for the case of excitons in the state n 1 is also made.

Finite-Difference Time-Domain Analysis of Scanning Tunneling Microscope Light Emission Spectra

“…In these materials, electron and hole effective masses are supposed to have nearly the same value. In this case, a great number of MPRRS lines with alternating intensity (N-even lines brighter than N-odd ones) were observed [10][11][12][13]. The MPRRS processes involving free electron-hole pairs (without Coulomb interaction) have also been investigated, in the presence of an external strong magnetic field with direct creation and indirect annihilation of electron-hole pairs when m e = m h , and with direct creation and direct annihilation of electron-hole pairs with m e = m h .…”