Scattered-light alignment system using SiC mask for x-ray lithography

Miyatake, Tsutomu; Hirose, Masaoki; Shoki, Tsutomu; Okubo, Ryo; Yamazaki, Keisuke

doi:10.1117/12.275780

Cited by 6 publications

(3 citation statements)

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“…This method is called the scattered light alignment (SLA) and was originally developed for proximity x-ray lithography (PXL). 11,12 Therefore, if the intensities from the two marks are not of the same order, the weaker signals cannot be detected, leading to the possible failure of alignment operation.…”

Section: Alignmentmentioning

confidence: 99%

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

et al. 2005

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Proximity electron lithography (PEL) using the ultra-thin tri-layer resist system has been successfully integrated in our dual-damascene Cu/low-k interconnects technology for the 90-nm node. Critical comparison between conventional ArF lithography and PEL as to the via-chain yield for test element groups (TEGs) including approximately 2.9 million via chains was performed to demonstrate its production feasibility.

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Section: Alignmentmentioning

confidence: 99%

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

et al. 2005

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“…With one exception, the entire tool set required has been provided by established commercial suppliers. 33 As with any technology, these tools will need improvements to satisfy the tighter error budgets of new technology generations. The current generation of synchrotrons is expected to satisfy XRL requirements even for future generations.…”

Section: Infrastructurementioning

confidence: 99%

Challenges and progress in x-ray lithography

Silverman

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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X-ray lithography ͑XRL͒ is a very promising technique with the potential to be available for integrated circuit manufacturing as early as the 130 nm generation. As a result of many years of development, the technology is relatively mature. Synchrotron sources have demonstrated performance and reliability; preproduction aligners are available from multiple vendors; significant improvements are being made in mask fabrication; and high resolution imaging has been demonstrated at 100 nm and below. Established vendors already have experience with almost all of the tools that are needed, although improved performance is required for most in order to satisfy the error budgets at 130 nm and below. Significant development activities are continuing in both the United States and Japan, and numerous complex integrated circuits have been fabricated using XRL for one or more critical levels. Nonetheless, there are challenges still to be met. Among the most important are the development and commercial availability of an improved e-beam mask writer; the ability to fabricate defect-free masks satisfying the image placement and critical dimension control requirements with good yields; the stability of the masks in usage ͑including the issue of possible radiation damage͒; the ability to correct for magnification errors; and the ability to satisfy the industry's desire for a technology extendible to 70 nm ground rules. These issues are primarily manufacturing issues, as opposed to issues related to demonstrating proof-of-concept or feasibility, although demonstrating extendibility is still needed before the industry can commit to using XRL at 70 nm ground rules. Because of the existing XRL facilities and experience, effective work to address these and other issues can be accomplished in a timely manner.

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“…2 Low optical transmittance in an x-ray mask was reported to degrade the alignment signal quality and mark recognition repeatability. 3,4 It was reported that thicker membranes ͑i.e., 5 m thick͒ improved the image placement, 5 while the optical transmittance was degraded with thicker membranes.…”

Section: Introductionmentioning

confidence: 99%

Nanometer scattered-light alignment system using SiC x-ray masks with low optical transparency

Miyatake

Hirose

Shoki

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Previously we described a video-based scattered-light alignment (SLA) system, capable of nanometer-scale alignment accuracy. In order to meet highly accurate alignment with low optical transparency in x-ray masks, we performed the modifications of alignment marks and an optical microscope imaging system on the conventional SLA system. The advanced SLA system has achieved a high alignment accuracy of 10.2–15.7 nm (|mean|+3σ) using a silicon carbide (SiC) x-ray mask of 18% optical transparency, coated with 5 nm thick chrome (Cr) film as an etching stop, with four different processed wafers: nitride, oxide, poly-Si, and aluminum. The different SiC membranes of 2–5 μm in thickness did not have an effect on the alignment accuracy in the nitride wafer.

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Scattered-light alignment system using SiC mask for x-ray lithography

Cited by 6 publications

References 0 publications

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

Challenges and progress in x-ray lithography

Nanometer scattered-light alignment system using SiC x-ray masks with low optical transparency

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