SCAPS Numerical Analysis of Solid-State Dye-Sensitized Solar Cell Utilizing Copper (I) Iodide as Hole Transport Layer

Noorasid, Nur Syamimi; Arith, Faiz; Firhat, Ain Yasmin; Mustafa, Ahmad Nizamuddin Muhammad; Shah, Ahmad Syahiman Mohd

doi:10.4186/ej.2022.26.2.1

Cited by 18 publications

(19 citation statements)

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“…This is apparent from the figure that the V oc and J sc have nearly no effect on R s , while the efficiency falls from 30.62% to 24.90%. FF is limited greatly from 88.17% to 71.66% by the large value of R s and this aspect solely contributes in lowering the efficiency 74 . The PV outputs as a function of R sh are also demonstrated in Figure 10B.…”

Section: Resultsmentioning

confidence: 86%

“…The parameters are carefully chosen based on the existing theoretical and experimental measurements 20,37,40,51,55,61,65‐71 . At room temperature, the thermal velocity of both electron and hole is anticipated to be 10 7 cm/s 72‐74 . The absorption coefficient of each layer is managed from the corresponding equation stated as α = A α ( h ν− E g ) 1/2 , herein A α is chosen to has the value of 10 5 75 .…”

Section: Device Configuration and Numerical Simulationmentioning

confidence: 99%

“…20,37,40,51,55,61,[65][66][67][68][69][70][71] At room temperature, the thermal velocity of both electron and hole is anticipated to be 10 7 cm/s. [72][73][74] The absorption coefficient of each layer is managed from the corresponding equation stated as α = A α (hν−E g ) 1/2 , herein A α is chosen to has the value of 10 5 . 75 For both front and back metal contacts, the surface recombination velocity of electron and hole is set to be 10 7 cm/s.…”

Section: Device Configuration and Numerical Simulationmentioning

confidence: 99%

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Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Riyad

Sunny

Khatun

et al. 2022

Engineering Reports

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This study reports on performance enhancement of a Cu2ZnSnS4 solar cell introducing Sb2S3 as hole transport layer (HTL) along WS2 as buffer layer. We have investigated photovoltaic (PV) characteristics by utilizing SCAPS‐1D. A comparative analysis on PV performances between conventional CZTS/CdS and proposed Ni/Sb2S3/CZTS/WS2/FTO/Al solar cells is presented. It is revealed that “spike like” band structure at the CZTS/WS2 interface having smaller conduction band offset makes it potential alternative to commonly used CdS buffer. This report also evaluates that the Sb2S3 as an HTL inserted at the rear of CZTS enhances performances by reducing carrier recombination at back interface with appropriate band alignment. The impacts of thickness, carrier concentration of different layers, and bulk defect density in CZTS as well as the interface defects on cell outputs are analyzed. The influences of temperature, work function, and cell resistances are also examined. Optimum absorber thickness of 1.0 μm along doping density of 1017 cm−3 is selected. A maximum efficiency of 30.63% is achieved for the optimized CZTS cell. Therefore, these results suggest that Sb2S3 as HTL and WS2 as buffer layer can be employed effectively to develop highly efficient and low‐cost CZTS solar cells.

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Section: Resultsmentioning

confidence: 86%

Section: Device Configuration and Numerical Simulationmentioning

confidence: 99%

Section: Device Configuration and Numerical Simulationmentioning

confidence: 99%

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Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Riyad

Sunny

Khatun

et al. 2022

Engineering Reports

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show abstract

“…In recent years, Solar Cell Capacitance Simulator (SCAPS) program is utilized in many studies to simulate the performance of various numbers of solar cells. [40][41][42][43] The different optoelectric parameter calculations in this program are based on solving 1D equations (Poisson equation and the continuity equation of electron and holes [44] ).…”

Section: Introductionmentioning

confidence: 99%

“…Commonly, doping with Li atoms is efficient in enhancing the quality of chalcogenide thin films for solar cells' applications. [27,[44][45][46] Our work exclusively investigates the effect of Li atom doping on PV properties of CTS-based solar cells using ball milling and PLD techniques for possible tandem solar cells' applications. In our case, Li-doped homemade targets have been made as a target pellet for thin-film growth by the PLD system using wet ball milling technique, and the incorporation of Li atoms has been made during the deposition process.…”

Section: Introductionmentioning

confidence: 99%

Effect of Li Doping on Cu₂SnS₃/n‐Si Heterojunction Solar Cells: Experiments and Simulation

Houimi

Gezgi̇n

Mercimek

et al. 2022

Cryst. Res. Technol.

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Cu 2 SnS 3 (CTS) semiconductor material owns very interesting absorbing properties that allow it to be effectively utilized in many thin-film-based heterojunction solar cells. In this work, using the ball milling method, a mixture of pure elemental powders is used to synthesize CTS material. Homemade undoped and Li-doped target pellets are used to form CTS-doped and CTS-undoped thin films. The crystallinity investigation of synthesized targets and thin films confirms the formation of CTS tetragonal phase. Compositional, morphologic, and optic studies are also made to examine the effect of Li atom incorporation on different properties of CTS thin films. These CTS thin films are also incorporated into heterojunction solar cells (Al/n-Si/CTS/Ag and Al/n-Si/Li 0.03 CTS/Ag). In addition, J-V characteristics of both CTS and Li 0.03 CTS solar cells are demonstrated and discussed in details. The effect of CTS thin films' thickness on the performance is studied using Solar Cell Capacitance Simulator (SCAPS-1D) program. The results of the calculation are discussed in details and compared with the experimental results. An increase in efficiency is achieved in solar cells based on Li-doped CTS thin films, and it is discussed in detail along with SCAPS-1D simulation that is carried out depending on the thickness of CTS thin films.

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Improved performance of lead-free Perovskite solar cell incorporated with TiO$${}_{2}$$ ETL and CuI HTL using SCAPs

et al. 2023

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SCAPS Numerical Analysis of Solid-State Dye-Sensitized Solar Cell Utilizing Copper (I) Iodide as Hole Transport Layer

Cited by 18 publications

References 0 publications

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Effect of Li Doping on Cu₂SnS₃/n‐Si Heterojunction Solar Cells: Experiments and Simulation

Improved performance of lead-free Perovskite solar cell incorporated with TiO$${}_{2}$$ ETL and CuI HTL using SCAPs

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SCAPS Numerical Analysis of Solid-State Dye-Sensitized Solar Cell Utilizing Copper (I) Iodide as Hole Transport Layer

Cited by 18 publications

References 0 publications

Performance evaluation of WS2 as buffer and Sb2S3 as hole transport layer in CZTS solar cell by numerical simulation

Performance evaluation of WS2 as buffer and Sb2S3 as hole transport layer in CZTS solar cell by numerical simulation

Effect of Li Doping on Cu2SnS3/n‐Si Heterojunction Solar Cells: Experiments and Simulation

Improved performance of lead-free Perovskite solar cell incorporated with TiO$${}_{2}$$ ETL and CuI HTL using SCAPs

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Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Effect of Li Doping on Cu₂SnS₃/n‐Si Heterojunction Solar Cells: Experiments and Simulation