2006
DOI: 10.1016/j.susc.2005.11.059
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Scanning tunnelling microscopy and spectroscopy of the reduced TiO2(100) surface

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Cited by 17 publications
(14 citation statements)
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“…On much less reduced surfaces like TiO 2 (1 1 0)-1 · 1 with (1 · 2) strands the surface state energy is close to À1.5 eV as reported by Batzill et al [17]. It also worth to mention that surface states related to oxygen vacations and forma- tion of Ti 3+ ions were recently observed on the reduced TiO 2 (1 0 0) surface with (1 · 3) and (1 · 7) reconstructions [18].…”
Section: Surface Modifications At Room Temperaturesupporting
confidence: 81%
“…On much less reduced surfaces like TiO 2 (1 1 0)-1 · 1 with (1 · 2) strands the surface state energy is close to À1.5 eV as reported by Batzill et al [17]. It also worth to mention that surface states related to oxygen vacations and forma- tion of Ti 3+ ions were recently observed on the reduced TiO 2 (1 0 0) surface with (1 · 3) and (1 · 7) reconstructions [18].…”
Section: Surface Modifications At Room Temperaturesupporting
confidence: 81%
“…[84] A systematic preparation of the (001)rutile orientation was accomplished by epitactic growth of titania on the Mo(100) surface by Oh et al [71] The TiO 2 films had a thickness of less than 10 nm and the deposition of Ti was, as usual, performed in an ambient O 2 pressure (p = 5 10 À7 Torr) with the Mo sample kept at 500-700 K, followed by a final annealing at temperatures between 900 and 1200 K. Growth mechanism, film composition and structure of the TiO 2 films were analysed using ion scattering, XPS, AES, LEED and STM. Films with thicknesses between 5 and 90 exhibited a (2 ffiffi ffi 2 p ffiffi ffi 2 p )R458 LEED pattern after annealing to~1000 K in vacuum.…”
Section: Other Orientationsmentioning
confidence: 99%
“…These levels are associated with Ti ions in the 3 + oxidation state and appear as occupied states within the bandgap. 15 In Fig. 3͑b͒, the LDOS of R-TiO 2 shows an enhancement of the conductivity in the bandgap ͑at −0.6 and −1.1 eV͒ resulting from the increase of Ti 3d states as additional O vacancies are created after annealing at 700°C.…”
mentioning
confidence: 96%