Scanning tunneling spectroscopy observations of the Coulomb staircase at room temperature from the dioctyldithiophosphate sodium salt molecules deposited on the (0001) graphite surface

Klusek, Z.; Łuczak, Małgorzata; Olejniczak, W.

doi:10.1016/s0169-4332(99)00281-0

Cited by 4 publications

(3 citation statements)

References 20 publications

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“…It is clear that the peak groups exclusively appear at positive or negative bias voltages. This is an unusual behavior for CB but similar to published work on dioctyldithiophosphate sodium salt molecules 21 . There it was a hallmark of two vastly different junction resistances and capacitances in which case the junction with the higher resistance (lower tunneling rate) dominates.…”

Section: Coulomb Blockadesupporting

confidence: 86%

“…Previous observations of Coulomb blockade using STM were performed mostly on special samples of small metallic particles at room temperature [22][23][24] or low temperature 21,[25][26][27][28][29][30] . All of these observations are usu- ally explained by orthodox Coulomb blockade theory 31,32 which calculates the tunnel rates between two electrodes and an island and thus the resulting current flow between the electrodes.…”

Section: Simulationsmentioning

confidence: 99%

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Coulomb blockade regions in sputter-deposited titanium nitride films

Dreyer¹,

Xu²,

Osborn³

et al. 2018

Preprint

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Section: Coulomb Blockadesupporting

confidence: 86%

Section: Simulationsmentioning

confidence: 99%

Coulomb blockade regions in sputter-deposited titanium nitride films

Dreyer¹,

Xu²,

Osborn³

et al. 2018

Preprint

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“…Such systems have been extensively studied in experiments over the last two decades. They can exhibit coulomb blockade at room temperature (11,(14)(15)(16) and their ease of fabrication makes a wide range of barrier materials available for experiments. Following Ref.…”

Section: B Memory Effect In Current-voltage Characteristicsmentioning

confidence: 99%

Single-electron tunneling with slow insulators

et al. 2015

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Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the dielectric layers in the tunnel barriers in the fluctuating electric fields induced by single-electron tunneling events and study transport in the single electron transistor (SET). Here "slow" dielectric implies slow compared to the characteristic time scales of the SET charging-discharging effects. We show that for strong enough polarizability, such that the induced charge on the island is comparable with the elementary charge, the transport properties of the SET substantially deviate from the known results of transport theory of SET. In particular, the Coulomb blockade is more pronounced at finite temperature, the conductance peaks change their shape and the current-voltage characteristics show the memory-effect (hysteresis). However, in contrast to SETs with ferroelectric tunnel junctions, here the periodicity of the conductance in the gate voltage is not broken, instead the period strongly depends on the polarizability of the gate-dielectric. We uncover the fine structure of the hysteresis-effect where the "large" hysteresis loop may include a number of "smaller" loops. Also we predict the memory effect in the current-voltage characteristics I(V ), with I(V ) = −I(−V ).

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Scanning tunneling spectroscopy study of the edge surface states on oxygen-etched graphite surface with the presence of liquid crystal steps

Klusek

2001

Vacuum

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Scanning tunneling spectroscopy observations of the Coulomb staircase at room temperature from the dioctyldithiophosphate sodium salt molecules deposited on the (0001) graphite surface

Cited by 4 publications

References 20 publications

Coulomb blockade regions in sputter-deposited titanium nitride films

Coulomb blockade regions in sputter-deposited titanium nitride films

Single-electron tunneling with slow insulators

Scanning tunneling spectroscopy study of the edge surface states on oxygen-etched graphite surface with the presence of liquid crystal steps

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