Scanning tunneling microscopy on cleaved silicon pn junctions

Kordić, S.; Loenen, E.J. van; Dijkkamp, D.; Hoeven, A. J.; Moraal, H.

doi:10.1109/iedm.1989.74278

Cited by 12 publications

(11 citation statements)

References 6 publications

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“…There have been a number of investigations of Si pn junctions with the STM, but direct imaging of the depletion region has been less than successful. [1][2][3][4][5][6][7] This is mainly due to Fermi-level pinning, caused by the large density of surface states in the band gap of Si͑001͒ and Si͑111͒, which dominates the tunneling characteristics and inhibits junction delineation. On the other hand, STM and scanning tunneling spectroscopy ͑STS͒ measurements of H-terminated 1,4,7-9 and oxide-covered 3,5,10 Si surfaces and pn junctions have demonstrated the ability of these layers to passivate the surface states so that the Fermi level is unpinned.…”

Section: ͓S0003-6951͑98͒01225-x͔mentioning

confidence: 99%

Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy

Hildner

Phaneuf

Williams

1998

Applied Physics Letters

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Section: ͓S0003-6951͑98͒01225-x͔mentioning

confidence: 99%

Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy

Hildner

Phaneuf

Williams

1998

Applied Physics Letters

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“…Therefore, the scanning force method is suitable for the potentiometry. 10,11 Scanning capacitance microscopy enabled lateral doping profiling with 200 nm resolution. Nonnenmacher, O'Boyle, and Wickramasinghe adopted the Kelvin method and developed Kelvin probe force microscopy ͑KFM͒; they showed contact potential differences on metal surfaces and Si-pn structures.…”

Section: Introductionmentioning

confidence: 99%

Kelvin probe force microscopy for characterization of semiconductor devices and processes

Tanimoto¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

109

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Kelvin probe force microscopy was applied to the characterization of Al 0.3 Ga 0.7 As/GaAs multilayer structures and Si-pn structures. The spatial resolution of Kelvin probe force microscopy measurement was investigated using cleaved Al 0.3 Ga 0.7 As/GaAs structures. A 40-nm-thick Al 0.3 Ga 0.7 As layer was resolved with potential difference of 15 mV. It was found that the measured potential is sensitive to the Al mole fraction for AlGaAs. Two-dimensional delineation of Si-pn structures was successfully carried out on the topmost and the cleaved surfaces. A decrease of a depletion-layer width with increasing the intensity of light illuminating the sample was observed. It was confirmed through investigating illumination effects on various kinds of structures that the measured Kelvin probe force microscopy potential reflects the surface band structure of the sample. A lateral impurity profile under the ion implantation mask was extracted from the two-dimensional potential image obtained on the cleaved pn junction by calibrating with the impurity concentration profile measured by the spreading resistance method.

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“…[2][3][4][5][6][7][8][9][10] This methodology has been adopted to probe the structure of interfaces, 2,4,6 band offsets, 9 and dopant distributions 3,5,7,8,10 in semiconducting materials, particularly pn junctions. The high lateral resolution of STM provides a means to obtain both structural and spectroscopic information on surfaces at the subnanometer scale.…”

Section: Introductionmentioning

confidence: 99%

Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal–oxide–semiconductor junctions

Thibado¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Cross-sectional scanning tunneling spectroscopy experiments were performed under air-ambient conditions on cleaved Si-based metal-oxide-semiconductor ͑MOS͒ junctions. With the scanning tunneling microscope tip in the vicinity of the oxide-semiconductor interface, the electric field-induced depletion region was found to pinch-off the tunneling current similar to the effect in a MOS field-effect transistor ͑MOSFET͒ where increasing gate bias reduces the channel current. In this study, the experimentally observed dependence of the tip-semiconductor I-V characteristics on the gate bias was interpreted within a transfer-Hamiltonian tunneling model representing the tip-semiconductor junction and including both tip-induced band-bending and gate bias effects.

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Scanning tunneling microscopy on cleaved silicon pn junctions

Cited by 12 publications

References 6 publications

Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy

Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy

Kelvin probe force microscopy for characterization of semiconductor devices and processes

Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal–oxide–semiconductor junctions

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