Scanning tunneling microscopy observation of self-affine fractal roughness in ion-bombarded film surfaces

Krim, J.; Heyvaert, I.; Haesendonck, C. Van; Bruynseraede, Y.

doi:10.1103/physrevlett.70.57

Cited by 314 publications

(176 citation statements)

References 19 publications

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“…(1.1) gives access to the exponents α and z both experimentally by reflection high energy electron diffraction (RHEED) (see, e.g., chaper 16 of Ref. [1]) and by direct imaging using a surface tunneling microscope [6] and theoretically by continuum models [1,2] and Monte-Carlo simulations [2,5].…”

Section: Introductionmentioning

confidence: 99%

Erratum: Short-time scaling behavior of growing interfaces [Phys. Rev. E55, 668 (1997)]

Krech¹

1997

Phys. Rev. E

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The short-time evolution of a growing interface is studied analytically and numerically for the Kadar-Parisi-Zhang (KPZ) universality class. The scaling behavior of response and correlation functions is reminiscent of the "initial slip" behavior found in purely dissipative critical relaxation (model A). Unlike model A the initial slip exponent for the KPZ equation can be expressed by the dynamical exponent z. In 2+1 dimensions z is estimated from the short-time evolution of the correlation function for ballistic deposition and for the RSOS model.

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Section: Introductionmentioning

confidence: 99%

Erratum: Short-time scaling behavior of growing interfaces [Phys. Rev. E55, 668 (1997)]

Krech¹

1997

Phys. Rev. E

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“…This behavior, i.e., ϳL H , with H the roughness exponent, is typical for a self-affine growth mode. 12 From the data in Fig. 4, Hϭ1.0Ϯ0.1 and Hϭ0.9Ϯ0.1 are deduced for a 600 and 80-nm-thick layer, respectively.…”

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confidence: 99%

Thin film growth of semiconducting Mg2Si by codeposition

Vantomme

Mahan

Langouche

et al. 1997

Applied Physics Letters

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Ultrahigh vacuum evaporation of magnesium onto a hot silicon substrate (⩾200 °C), with the intention of forming a Mg2Si thin film by reaction, does not result in any accumulation of magnesium or its silicide. On the other hand, codeposition of magnesium with silicon at 200 °C, using a magnesium-rich flux ratio, gives a stoichiometric Mg2Si film which can be grown several hundreds of nm thick. The number of magnesium atoms which condense is equal to twice the number of silicon atoms which were deposited; all the silicon condenses while the excess magnesium in the flux desorbs. The Mg2Si layers thus obtained are polycrystalline with a (111) texture. From the surface roughness analysis, a self-affine growth mode with a roughness exponent equal to 1 is deduced.

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“…Rough substrate walls with self-affine geometry, are produced in experiments [7], [8] and adsorption phenomena have been already observed on them [8]. On the other hand, interface depinning belongs to a more general class of disorder-induced delocalization phenomena of fluctuating manifolds from extended defects [9].…”

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confidence: 99%

Effect of surface roughness on bulk-disorder–induced wetting

Sartoni¹,

Stella²,

Giugliarelli³

et al. 1997

Europhys. Lett.

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PACS. 68.45Gd -Wetting. PACS. 05.70Fh -Phase transitions: general aspects. PACS. 82.65Dp -Thermodynamics of surfaces and interfaces.Abstract. -Transfer-matrix results in 2D show that wetting of a rough, self-affine wall induced by bulk bond disorder turns discontinuous as soon as the wall roughness exponent ζW exceeds ζ0 = 2/3, the spatial anisotropy index of interface fluctuations in the bulk. For ζW < 2/3 critical wetting is recovered, in the same universality class as for the flat-wall case. These and related findings suggest a free-energy structure such to imply first-order wetting also without disorder, or in 3D, whenever ζW exceeds the appropriate ζ0. The same thresholds should apply also with van der Waals forces, in cases when ζ0 implies a strong-fluctuation regime. . An example is offered by the 2D Ising model on semi-infinite lattice. At T = 0, with suitable boundary conditions, the interface can be localized on a line of weak ferromagnetic bonds along the edge (wall). If the bulk couplings are disordered, upon reducing wall attraction depinning eventually occurs. This ill-condensed matter version of critical wetting in 2D belongs to a different universality class as similar transitions controlled by thermal fluctuations alone. Indeed, the mean wall-interface distance h diverges as ∆ −ψ , where ψ = 2 [1] and ∆ measures the deviation from critical edge attraction conditions. ψ = 1 holds for the thermal case without disorder [6].An as yet unanswered question concerns the possible effect of additional, geometrical surface disorder on this type of wetting. Rough substrate walls with self-affine geometry, are produced in experiments [7], [8] and adsorption phenomena have been already observed on them [8]. On the other hand, interface depinning belongs to a more general class of disorder-induced delocalization phenomena of fluctuating manifolds from extended defects [9].

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Scanning tunneling microscopy observation of self-affine fractal roughness in ion-bombarded film surfaces

Cited by 314 publications

References 19 publications

Erratum: Short-time scaling behavior of growing interfaces [Phys. Rev. E55, 668 (1997)]

Erratum: Short-time scaling behavior of growing interfaces [Phys. Rev. E55, 668 (1997)]

Thin film growth of semiconducting Mg2Si by codeposition

Effect of surface roughness on bulk-disorder–induced wetting

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