Scanning transmission electron microscopy investigations of self-forming diffusion barrier formation in Cu(Mn) alloys on SiO2

Lozano, J.; Bogan, J.; Casey, P.; McCoy, Anthony; Hughes, Greg; Nellist, Peter D.

doi:10.1063/1.4822441

Cited by 16 publications

(5 citation statements)

References 17 publications

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“…It is also observed that there is a shift in the diffraction peaks corresponding to ZSO towards higher angle in BTS4, suggesting a reduction in unit cell volume, as we discussed earlier in another study [37]. The reduction in the cell volume can be associated with the expulsion of the large Sm atom out of the ZnO's wurtzite structure or induced oxygen vacancy during the ERTA [44][45][46][47][48].…”

Section: Resultssupporting

confidence: 58%

Charge mediated room temperature magnetoelectric coupling in Zn_1−xSm_xO/BaTiO₃bilayer thin film

et al. 2015

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We present a room-temperature magnetoelectrically coupled bilayer thin film multiferroic system (BTS) ‘Zn1−xSmxO/BaTiO3 (where x = 0.02 and 0.04)’ grown on a SrTiO3 (100) substrate. The thin film layers are polycrystalline and continuous with an average roughness of 3.2 nm. At room temperature, the BTSs with x = 0.02 (BTS2) and x = 0.04 (BTS4) are ferromagnetic with a saturation magnetic moment (Ms) of 5.1 memu and 8.6 memu respectively, while the latter shows a paramagnetic trace. Both BTS2 and BTS4 are ferroelectric at room temperature with a saturation polarization (Ps) of 12.51 μC cm−2 and 6.75 μC cm−2, respectively. The coercive (electric) field required to polarize BTSs increases as a function of x (25.2 kV cm−1 for BTS2 and 62.3 kV cm−1 for BTS4). The change in degree of polarization/magnetization (domain contrast of the piezoresponse/magnetic force microscopy images), permittivity and resistance, as a function of external magnetic/electric field, directly suggests that the Zn0.98Sm0.02O/BaTiO3 BTS is magnetoelectrically coupled at room temperature.

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Section: Resultssupporting

confidence: 58%

Charge mediated room temperature magnetoelectric coupling in Zn_1−xSm_xO/BaTiO₃bilayer thin film

et al. 2015

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“…Discovering a suitable barrier to be inserted between a copper (Cu) layer and an Si substrate for certain microelectronic interconnects so as to reduce or prevent diffusion and reactions between the Cu and Si can be a formidable task as the dimensions of interconnects, and, hence, the barrier thickness, decrease to the nanometer range 1) as a result of the continuous trend of miniaturization in electronic devices. At the nanometer scale range, Cu resistivity increases owing to the electron and grain boundary scattering associated with the barrier layer.…”

Section: Introductionmentioning

confidence: 99%

New Cu(AuTiN_x) copper alloy film and its features

Lin¹

2015

Jpn. J. Appl. Phys.

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In this study, a new copper alloy [Cu(AuTiN x )] film is developed for industrial applications, by cosputtering Cu and titanium gold (AuTi) targets on a barrierless Si substrate within a vacuum chamber sparsely filled with N2 gas. Through extensive tests conducted in this study, the new alloy film, after annealing at 720 °C for 1 h, shows good thermal stability and high adhesion strength to the substrate, without appreciable interactions between the film and the substrate. The new Cu(AuTiN x ) alloy film also has adequate wetting for solder, shows good solderability, and has a dissolution rate lower than that of pure Cu by at least 1 order of magnitude, in addition to having a comparable consumption rate to that of Ni. The alloy film seems to be suitable for many industrial applications, e.g., barrierless Si metallization, interconnect manufacture, and as new wetting and diffusion layers for flip-chip solder joints in conventional metallurgy.

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“…Mn atoms segregate out easily of Cu-Mn alloys and react with SiO 2 to form a stable barrier layer. 6,22,23 Thermal stress conditions ranged from room temperature to 550 C. Figure 7 shows leakage current versus applied electric field curves of the (a) Cu-Al (4.6 at. %) alloy/SiO 2 /Si sample after 1 h of annealing at 300 C; (b) Cu-Al (4.6 at.…”

Section: A131-3 Parkmentioning

confidence: 99%

“…Self-forming barriers, when fabricated by directly depositing a Cu-M (Mn, Ti) alloy on dense SiO 2 substrate followed by heat treatment, have been demonstrated to function as effective Cu diffusion barriers. 6,7 The self-forming barrier approach requires just one Cu-M alloy layer instead of two (Ta/TaN barrier and Cu seed layer). The thinner overall film thickness helps to minimize the overhang when a PVD process is used and also reduces the aspect ratio, which is of benefit in the Cu plating process as it promotes void-free filling.…”

Section: Introductionmentioning

confidence: 99%

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

Park

Han

Kang

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H2 plasma, while Al was deposited using trimethylaluminum as the precursor and H2 plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO2 dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects.

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Scanning transmission electron microscopy investigations of self-forming diffusion barrier formation in Cu(Mn) alloys on SiO2

Cited by 16 publications

References 17 publications

Charge mediated room temperature magnetoelectric coupling in Zn_1−xSm_xO/BaTiO₃bilayer thin film

Charge mediated room temperature magnetoelectric coupling in Zn_1−xSm_xO/BaTiO₃bilayer thin film

New Cu(AuTiN_x) copper alloy film and its features

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

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Scanning transmission electron microscopy investigations of self-forming diffusion barrier formation in Cu(Mn) alloys on SiO2

Cited by 16 publications

References 17 publications

Charge mediated room temperature magnetoelectric coupling in Zn1−xSmxO/BaTiO3bilayer thin film

Charge mediated room temperature magnetoelectric coupling in Zn1−xSmxO/BaTiO3bilayer thin film

New Cu(AuTiNx) copper alloy film and its features

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

Contact Info

Product

Resources

About

Charge mediated room temperature magnetoelectric coupling in Zn_1−xSm_xO/BaTiO₃bilayer thin film

Charge mediated room temperature magnetoelectric coupling in Zn_1−xSm_xO/BaTiO₃bilayer thin film

New Cu(AuTiN_x) copper alloy film and its features