Scanning Thermal Microscopy of Ultrathin Films: Numerical Studies Regarding Cantilever Displacement, Thermal Contact Areas, Heat Fluxes, and Heat Distribution

Metzke, Christoph; Kühnel, Fabian; Weber, Jonas; Benstetter, Günther

doi:10.3390/nano11020491

Cited by 4 publications

(3 citation statements)

References 36 publications

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“…We performed scanning thermal microscopy (SThM) to determine the thermal conductivity (or thermal resistance) 83 – 85 of the multilayer hBN on thermal SiO 2 samples before and after annealing as a measure of the conformal contact of the 2D material with its substrate 9 , 82 . In SThM, the measured thermal signal in Volt corresponds to the thermal interface resistances (TIRs) between the layers for a system of ultrathin layers 86 .…”

Section: Resultsmentioning

confidence: 99%

Button shear testing for adhesion measurements of 2D materials

Schätz,

Nayi,

Weber

et al. 2024

Nat Commun

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Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene, hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on silicon dioxide and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying the adhesion of 2D materials.

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Section: Resultsmentioning

confidence: 99%

Button shear testing for adhesion measurements of 2D materials

Schätz,

Nayi,

Weber

et al. 2024

Nat Commun

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“…To this end, various measurement methods may be deployed. Among them are thermoreflectance imaging [ 5 , 6 ], the time-domain thermoreflectance method (TDTR) [ 7 , 8 ], the laser flash method [ 9 , 10 ], the micro-Raman method [ 11 , 12 ], scanning thermal microscopy (SThM) [ 13 , 14 ], and many more.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Heater Structures for Thermal Conductivity Measurements of SiO2 and Al2O3 Thin Films Using the 3-Omega Method

et al. 2022

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A well-known method for measuring thermal conductivity is the 3-Omega (3ω) method. A prerequisite for it is the deposition of a metal heater on top of the sample surface. The known design rules for the heater geometry, however, are not yet sufficient. In this work, heaters with different lengths and widths within the known restrictions were investigated. The measurements were carried out on SiO2 thin films with different film thicknesses as a reference. There was a significant difference between theoretical deposited heater width and real heater width, which could lead to errors of up to 50% for the determined thermal conductivity. Heaters with lengths between 11 and 13 mm and widths of 6.5 µm or more proved to deliver the most trustworthy results. To verify the performance of these newfound heaters, additional investigations on Al2O3 thin films were carried out, proving our conclusions to be correct and delivering thermal conductivity values of 0.81 Wm−1 K−1 and 0.93 Wm−1 K−1 for unannealed and annealed samples, respectively. Furthermore, the effect of annealing on Al2O3 was studied, revealing a significant shrinking in film thickness of approximately 11% and an increase in thermal conductivity of 15%. The presented results on well-defined geometries will help to produce optimized heater structures for the 3ω method.

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“…The first paper by Metzke et al [ 13 ] illustrates the use of atomic force microscopy (AFM)-based scanning thermal microscopy techniques to characterize the thermal properties of nanoscale systems. Specifically speaking, this work focuses on theoretical studies of ultrathin films with anisotropic thermal properties, such as hexagonal boron nitride (h-BN), and compares the results with a bulk silicon (Si) sample.…”

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confidence: 99%