Scanning probe microscopy for advanced nanoelectronics

Hui, Fei; Lanza, Mario

doi:10.1038/s41928-019-0264-8

Cited by 97 publications

(69 citation statements)

References 83 publications

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“…C‐AFM is also suitable to track the carrier transporting path in polycrystalline thin films . Until now, as an advanced, nondestructive analysis method with high spatial resolution imaging, C‐AFM has attracted intensive attention, and its applications successfully extended to nanoelectronics field, solar cell, biosensors, and semiconductor industries …”

Section: Basic Working Principles Of C‐afm Imagingmentioning

confidence: 99%

“…[37] Until now, as an advanced, nondestructive analysis method with high spatial resolution imaging, C-AFM has attracted intensive attention, and its applications successfully extended to nanoelectronics field, solar cell, biosensors, and semiconductor industries. [38][39][40][41] C-AFM evolved from scanning tunneling microscopy (STM) possesses superior performance since the employ of a conductive cantilever instead of a metal wire. The electrical measurement in C-AFM is conducted through the preamplifier with low noise and high gain, while the topography is simultaneously recorded via the cantilever defection.…”

Section: Basic Working Principles Of C-afm Imagingmentioning

confidence: 99%

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Emerging Conductive Atomic Force Microscopy for Metal Halide Perovskite Materials and Solar Cells

Zhang

et al. 2020

Advanced Energy Materials

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Metal halide perovskite materials, benefiting from a combination of outstanding optoelectronic properties and low‐cost solution‐preparation processes, show tremendous potential for optoelectronics and photovoltaics. However, the nanoscale inhomogeneities of the electronic properties of perovskite materials cause a number of difficulties, such as recombination, stability, and hysteresis, all of which seriously restrict device performance. Scanning probe microscopy, as a high‐resolution imaging technique, has been widely used to connect local properties and micro‐area morphologies to overall device performance. Conductive atomic force microscopy (C‐AFM) can realize a real‐space visualization of topography coupled with optoelectronic properties on a microscopic scale and thereby is uniquely suited to probe the local effects of perovskite materials and devices. The fundamental principles, alternative operation modes, and development of C‐AFM are comprehensively reviewed, and applications in perovskite solar cells (PSCs) for electronic transport behavior, ion migration and hysteresis, ferroelectric polarization, and facet orientation investigation are discussed. A comprehensive understanding and summary of up‐to‐date applications in PSCs is beneficial to further fully exploit the potential of such an emerging technique, so as to provide a novel and effective approach for perovskite materials analysis.

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Section: Basic Working Principles Of C‐afm Imagingmentioning

confidence: 99%

Section: Basic Working Principles Of C-afm Imagingmentioning

confidence: 99%

Emerging Conductive Atomic Force Microscopy for Metal Halide Perovskite Materials and Solar Cells

Zhang

et al. 2020

Advanced Energy Materials

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“…[1] Today, most of the fundamental research related to SiC and the devices development are focused on the hexagonal polytype (4H-SiC). de In this context, nanoscale resolution current mapping by conductive atomic force microscopy (CAFM) [15][16][17] proved to be a powerful method to investigate the role played by defects on the electrical behavior of 3C-SiC. [2] www.advelectronicmat.…”

Section: Introductionmentioning

confidence: 99%

Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

Giannazzo

Greco

Franco

et al. 2020

Adv Elect Materials

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In spite of its great promise for energy‐efficient power conversion, the electronic quality of cubic silicon carbide (3C‐SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. A macro‐ and nanoscale characterization of Schottky contacts on 3C‐SiC/Si is carried out to elucidate the impact of the anti‐phase boundaries (APBs) and stacking faults (SFs) on the forward and reverse current–voltage characteristics of these devices. Current mapping of 3C‐SiC by conductive atomic force microscopy directly shows the role of APBs as the main defects responsible of the reverse bias leakage, while both APBs and SFs are shown to work as preferential current paths under forward polarization. Distinct differences between these two types of defects are also confirmed by electronic transport simulations of a front‐to‐back contacted SF and APB. These experimental and simulation results provide a picture of the role played by different types of extended defects on the electrical transport in vertical or quasi‐vertical devices based on 3C‐SiC/Si, and can serve as a guide for improving material quality by defects engineering.

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“…Most scanning magnetic microscopes require a cryogenic system, so their operation and maintenance are generally expensive, rendering them unfeasible for most low-cost laboratories [1][2][3]. Scanning magnetic microscopes using nonsuperconducting devices have recently been proposed in the literature, some of them for geological applications [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Scanning Magnetic Microscope Using A Hall-Effect Sensor for Images of Remanent Magnetization Fields

Araújo¹,

Correa²,

Yokoyama³

et al. 2019

Preprint

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Scanning magnetic microscopy is a new tool that has recently been used to map magnetic fields with good spatial resolution and field sensitivity. This technology has great advantages over other instruments; for example, its operation does not require cryogenic technology, which reduces its operational cost and complexity. Here, we describe the construction of a customizing scanning magnetic microscope based on commercial Hall-effect sensors at room temperature that achieves a spatial resolution of 200 µm. Two scanning stages on the x- and y-axes of precision, consisting of two coupled actuators, control the position of the sample, and this microscope can operate inside or outside a magnetic shield. We obtained magnetic field sensitivities better than 521 nTrms/√Hz between 1 and 10 Hz, which correspond to a magnetic momentum sensitivity of 9.20 × 10–10 Am2. In order to demonstrate the capability of the microscopy, polished thin sections of geological samples, samples containing microparticles and magnetic nanoparticles were measured. For the geological samples, a theoretical model was adapted from the magnetic maps obtained by the equipment. Vector field maps are valuable tools for the magnetic interpretation of samples with a high spatial variability of magnetization. These maps can provide comprehensive information regarding the spatial distribution of magnetic carriers. In addition, this model may be useful for characterizing isolated areas over samples or investigating the spatial magnetization distribution of bulk samples at the micro and millimeter scales. As an auxiliary technique, a magnetic sweep map was created using Raman spectroscopy; this map allowed the verification of different minerals in the samples. This equipment can be useful for many applications that require samples that need to be mapped without a magnetic field at room temperature, including rock magnetism, the nondestructive testing of steel materials and the testing of biological samples. The equipment can not only be used in cutting-edge research but also serve as a teaching tool to introduce undergraduate, master's and Ph.D. students to the measurement methods and processing techniques used in scanning magnetic microscopy.

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Scanning probe microscopy for advanced nanoelectronics

Cited by 97 publications

References 83 publications

Emerging Conductive Atomic Force Microscopy for Metal Halide Perovskite Materials and Solar Cells

Emerging Conductive Atomic Force Microscopy for Metal Halide Perovskite Materials and Solar Cells

Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

Scanning Magnetic Microscope Using A Hall-Effect Sensor for Images of Remanent Magnetization Fields

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