Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis

Horiba, Koji; Nakamura, Yuya; Nagamura, Naoka; Toyoda, Satoshi; Kumigashira, Hiroshi; Oshima, Masaharu; Amemiya, Kenta; Senba, Yasunori; Ohashi, Haruhiko

doi:10.1063/1.3657156

Cited by 64 publications

(49 citation statements)

References 21 publications

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“…The interface chemical composition is probed nanoscopically by using three-dimensional high-resolution scanning photoelectron microscopy (3D nano-ESCA (electron spectroscopy for chemical analysis)) using a focused incident X-ray beam with a diameter of 70 nm and a photon energy of 1000 eV3031. The energy resolution of the spectrometer was set to 300 meV32.…”

Section: Resultsmentioning

confidence: 99%

Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication

Fukidome

Ide

Kawai

et al. 2014

Sci Rep

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Graphene exhibits unusual electronic properties, caused by a linear band structure near the Dirac point. This band structure is determined by the stacking sequence in graphene multilayers. Here we present a novel method of microscopically controlling the band structure. This is achieved by epitaxy of graphene on 3C-SiC(111) and 3C-SiC(100) thin films grown on a 3D microfabricated Si(100) substrate (3D-GOS (graphene on silicon)) by anisotropic etching, which produces Si(111) microfacets as well as major Si(100) microterraces. We show that tuning of the interface between the graphene and the 3C-SiC microfacets enables microscopic control of stacking and ultimately of the band structure of 3D-GOS, which is typified by the selective emergence of semiconducting and metallic behaviours on the (111) and (100) portions, respectively. The use of 3D-GOS is thus effective in microscopically unlocking various potentials of graphene depending on the application target, such as electronic or photonic devices.

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Section: Resultsmentioning

confidence: 99%

Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication

Fukidome

Ide

Kawai

et al. 2014

Sci Rep

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“…We performed scanning photoelectron emission microscopic (SPEM) measurements using a three-dimensional nanoscale electron-spectroscopy chemical analysis (3D nano-ESCA) system that was installed at BL07LSU of SPring-8. [14][15][16][17] The lateral and energy resolutions were set to 100 nm and 300 meV, respectively, at an excitation photon energy of 1000 eV. Figure 1 depicts wide scan photoelectron spectra that are obtained from four different positions (X = 0.1, 0.7, 1.2, and 1.8 µm from the SiC c-plane surface) of the trench sidewall, respectively.…”

Section: Methodsmentioning

confidence: 99%

Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs

Oshima

Mori

Takigawa

et al. 2018

e-J. Surf. Sci. Nanotech.

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SiC trench structures having a width of 0.6 µm and a depth of 2.0 µm are fabricated by reactive ion etching (RIE) using a gas mixture of SF6, Ar, and O2. Further, SiC trench structures are cleaved to expose the sidewall for the channel region of a trench MOSFET. These structures were analyzed by pin-point photoelectron spectroscopy using a 100 nm soft-X-ray beam. It is observed that around 2 nm-thick homogeneous carbon-rich layer containing 1-2% F forms on the SiC sidewalls. This may be caused due to the re-deposition of RIE reaction products, CF4 and SiF4, under appropriate conditions to fabricate the trench walls that are approximately vertical using RIE. Further, a carbon-rich layer having a thickness of about 2.4 nm is also formed on the bottom of the SiC trench, suggesting the possibility of selective etching of Si from the SiC substrates. The position of the dominant peak that is associated with the SiC component remains constant regardless of the trench depth, suggesting homogeneous band bending due to the RIE defects, which may explain the reason for no variation being observed in the gate oxide/SiC interface trap density values. Further, the band bending of 1.50 eV that is observed on the sidewall can be attributed to a positively charged carbon vacancy (V + C ).

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“…9 Scanning photoelectron microscopy (SPEM) involving photoemission spectroscopy (PES) with a nano-focused Xray probe is a powerful experimental technique for revealing the operation mechanism of nano-devices by observation of local changes in electronic structure. In our previous studies, we applied this SPEM technique 10 to ReRAM devices with Ni nanowires and found that on/off switching corresponds well to reduction and oxidation states. 11 We also have made the clear observation of p-type region formation around 500 nm thick at the metal electrode-graphene interface caused by Thomas-Fermi screening in a graphene FET.…”

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confidence: 95%

“…10 The lateral resolution and energy resolution at excitation photon energy of 1000 eV were set to 100 nm and 300 meV, respectively. In order to enable operando SPEM measurements during OFET operation, we developed a new sample holder with five independent electrodes including source, drain, gate, and two ground electrodes.…”

mentioning

confidence: 99%

Chemical potential shift in organic field-effect transistors identified by soft X-ray operando nano-spectroscopy

Nagamura

Kitada

Tsurumi

et al. 2015

Applied Physics Letters

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Study of electrical performance and stability of solution-processed n -channel organic field-effect transistors J. Appl. Phys. 106, 054504 (2009); 10.1063/1.3204655 High-performance dinaphtho-thieno-thiophene single crystal field-effect transistors Appl. Phys. Lett. 95, 022111 (2009); 10.1063/1.3183509 Integration of reduced graphene oxide into organic field-effect transistors as conducting electrodes and as a metal modification layer Appl. Phys. Lett. 95, 023304 (2009); 10.1063/1.3176216Conducting channel formation and annihilation in organic field-effect structures

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Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis

Cited by 64 publications

References 21 publications

Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication

Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication

Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs

Chemical potential shift in organic field-effect transistors identified by soft X-ray operando nano-spectroscopy

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