We present a potential to achieve an ultrahigh density recording in both a nano-bit writing and a high speed readout using an evanescent light-phase change recording. As a result, we first demonstrate a 60nm-diameter phase-changed domain (bit) writing, which means the possibility to achieve an ultrahigh density recording of 170Gb/in 2 • The possibility to read the phase changed bits ata high speed of 10Mbls is discussed.