Scanning multishot irradiations on a large-area glass substrate for Xe-Arc flash lamp crystallization of amorphous silicon thin-film

Rapid photonic curing effects of xenon flash lamp on ITO–Ag–ITO multilayer electrodes for high throughput transparent electronics

“…Xe-FLA is one of the thermal annealing methods that can heat thin films in a very short time without damaging the substrate. Various studies have been reported on Xe-FLA based on the heat treatment effect [38][39][40]44 .…”

“…To realize a superior transparent flexible ITO-Ag-ITO electrode with high transmittance and high conductivity, while ensuring high-throughput, a postannealing process with a low thermal budget is required to provide high transmittance and high conductivity, while ensuring high-throughput. Digital thermal processing using Xenon flash lamp annealing (Xe-FLA) is an ideal curing method that can be applied to heat-sensitive substrates while retaining the effects of previous heat treatments on thin films [37][38][39][40] . Many previous reports have examined the digital thermal processing effects on ITO and amorphous silicon thin films during Xe-FLA irradiation 37 .…”

Experimental Activation Energy for Solid Phase Crystallization of Amorphous Silicon Thin Films at Elevated Temperatures Using Vertical-Cavity Surface-Emitting Laser-Based Infrared Heating

“…Layered composite film stacks of Si 3 N 4 and SiO 2 layers are generally used as a buffer or barrier layer in TFT manufacturing technology, and the composite Si 3 N 4 /SiO 2 layer serves as an adhesion layer to the overlying Si thin film, as a protective layer against undesired contamination from the underlying glass substrate, and as a protective layer against wet etching in flat panel displays. 1 Amorphous Si-thin films were cut into square plates of 10 mm × 10 mm in area and subjected to dehydrogenation annealing at 470 °C for 15 min using VCSEL prior to VCSEL-based rapid heating onto amorphous Si thin films. Figure 3 depicts the distributions of irradiation intensity on the substrate at five working distances according to the configuration defined in Fig.…”

“…Low-temperature polycrystalline Si thin-film transistors (TFTs) have been regarded as one of the most significant next-generation technologies for large flat panel displays in combination with activematrix organic light-emitting diodes. 1 The crystallization process of amorphous silicon thin films has been studied extensively and applied to diverse polycrystalline Si thin films for high-performance displays, high-quality large-area electronic devices, and high-efficiency solar cells. 2 Polycrystalline Si thin-film transistors have higher charge carrier mobilities and excellent electric field stabilities than their counterparts in amorphous Si thin materials.…”

Communication—CMOS Thin-Film Transistors via Xe Flash-Lamp Crystallization of Patterned Amorphous Si

“…However the development of an FLA system capable of providing uniform irradiance over large area requires a significant engineering effort. 6 While there have been recent reports of FLA Polycrystalline Silicon (FLAPS) that focus on photovoltaics, 7 reports on TFTs have been very limited, 8,9 with none appearing in the literature within the last five years. The lack of improvement of PMOS devices and the lack of demonstration of NMOS devices is likely due to variation in the resulting polycrystalline film morphology and difficulties in process control and optimization.…”