Scanning electron microscope observation of single defects in solid crystalline materials

Morin, Pierre; Pitaval, M.; Vicario, E.; Fontaine, G.

doi:10.1002/sca.4950020403

Cited by 22 publications

(10 citation statements)

References 4 publications

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“…suggested that it could be possible to use this phenomenon for imaging defects under the surface of a bulk sample 2 . Therefore, an attractive technique called Electron Channeling Contrast Imaging (ECCI) was developed 3 , 4 . It provides microstructure analyses on bulk samples where crystalline defects can be imaged with a visibility depth of about a hundred nanometers below the surface (the same order of magnitude of the thickness of a Transmission Electron Microscope –TEM – thin foil) 5 .…”

Section: Introductionmentioning

confidence: 99%

“…Generally, literature reports that ECC images are obtained when the incident beam is oriented near a Kikuchi band edge where the BackScattered Electron (BSE) intensity is minimal. This corresponds to a channeling condition 3 . It has been shown that contrast of crystalline defects, such as dislocations, changes with the beam orientation near the band edge 9 , 10 : when the incident beam is exactly oriented on the band edge, dislocations have a white/black contrast 4 .…”

Section: Introductionmentioning

confidence: 99%

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Fundamental and experimental aspects of diffraction for characterizing dislocations by electron channeling contrast imaging in scanning electron microscope

Kriaa

Guitton

Maloufi

2017

Sci Rep

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Nowadays Field Emission Gun-Scanning Electron Microscopes provide detailed crystallographic information with high spatial and angular resolutions, and allow direct observation of crystalline defects, such as dislocations, through an attractive technique called Electron Channeling Contrast Imaging (ECCI). Dislocations play a crucial role in the properties of materials and ECCI has naturally emerged as an adapted tool for characterizing defects in bulk specimen. Nevertheless, fine control of the channeling conditions is absolutely required to get strong dislocation contrast for achieving comprehensive analysis. In this work, experiment-assisted fundamental aspects of the origin of dislocation contrast are studied. Experimentally, the potential of ECCI is explored in several dislocation configurations in Interstitial-Free steel (Fe − 1% Si) used as a model material. Full interpretations of dislocation contrast in (g, −g) and its evolution along the Kikuchi band are shown. Furthermore, a dislocation dipole is observed and fully characterized for the first time in an SEM.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fundamental and experimental aspects of diffraction for characterizing dislocations by electron channeling contrast imaging in scanning electron microscope

Kriaa

Guitton

Maloufi

2017

Sci Rep

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“…5. Morin et al (1979) have demonstrated the direct imaging of crystal defects by the high voltage LLE method. 6.…”

Section: Studies Of Samples Having Shallow Surface Topography By the mentioning

confidence: 99%

Proceedings of SCANNING 2000 May 9–12, 2000 San Antonio, Texas, USA

2000

Scanning

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The layer sequence of multilayered white and off-white paint chips is sometimes difficult to discern when utilizing commonly employed microscopical methods. This layer sequence information becomes vitally important when comparing a questioned paint sample to a paint sample of known origin. Techniques such as reflected light microscopy, fluorescence microscopy, and scanning electron microscopy (SEM) coupled with energy dispersive x-ray spectrometry (EDS) may not provide the needed discrimination. The elemental information obtained by EDS is of limited value since elemental composition alone is not sufficient to identify pigments/extenders used in white and offwhite paints or to distinguish between different phases. Also, binder information may not be available for comparison since the thinness of the layers and the abundance of extender pigments may preclude analysis by Fourier transform infrared (FTIR) microspectrophotometry.Cathodoluminescence microscopy (CLM) may provide the needed layer sequence information and discrimination when analyzing and comparing multilayered white and off-white paint samples. Cathodoluminescence is the emission of radiation from the sample in the visible light region and neighboring wavelengths following excitation by electrons generated from a cathode electron gun. CLM provides further discrimination of the layer sequence of multilayered white and off-white paint samples since cathodoluminescence is sensitive to phase differences, trace amounts of foreign atoms, and other lattice imperfections.Analysis of polished cross-sections by CLM was accomplished utilizing a light microscope coupled with a vacuum specimen chamber and a cold-cathode electron gun. A comparison was made of the layer information obtained by CLM, darkfield reflected light microscopy, fluorescence microscopy, and SEM-EDS of several architectural paint cross-sections.

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“…Typically, spectra for large tilt and low take-off show a superposition of the sawtooth-like peak at high BSE energies produced by electrons with a short path length in the solid and a broader contribution by electrons travelling through the diffusion cloud. Using this principle, retarding field filters with spherical grids and a larger solid angle, as used for low-loss imaging by Wells (1971Wells ( , 1979 and Morin et al (1979), could be used for recording BSE spectra up to 20-30 keV. The energy resolution can be increased by two grids at the potential -u separated by a few millimeters as this considerably decreases the effective potential drop at the mesh centers.…”

Section: Retanling Field Spectrometermentioning

confidence: 99%

Calculation of energy spectra from layered structures for backscattered electron spectrometry and relations to rutherford backscattering spectrometry by ions

et al. 1991

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Scanning electron microscope observation of single defects in solid crystalline materials

Cited by 22 publications

References 4 publications

Fundamental and experimental aspects of diffraction for characterizing dislocations by electron channeling contrast imaging in scanning electron microscope

Fundamental and experimental aspects of diffraction for characterizing dislocations by electron channeling contrast imaging in scanning electron microscope

Proceedings of SCANNING 2000 May 9–12, 2000 San Antonio, Texas, USA

Calculation of energy spectra from layered structures for backscattered electron spectrometry and relations to rutherford backscattering spectrometry by ions

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