2008
DOI: 10.1080/14786430802243865
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Scanning electron and polarization microscopy study of the variability and character of hollow macro-defects in silicon carbide wafers

Abstract: Polarization microscopy is a suitable tool for studying strain in appropriately cut SiC single crystals. The outline shape examined by electron microscopy and the induced interference pattern observed by polarization microscopy were both used to study the variation and character of macro-defects present in SiC wafers. While voids are usually in a relaxed state, hollow-core dislocations are characterized by large interference halos up to $100 mm in diameter. Conoscopy, i.e. evaluation of the interference patter… Show more

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Cited by 11 publications
(16 citation statements)
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“…Figure 7 depicts a radialite (∅137 μm) that has formed around a≈1 μm small micropipe (hollow‐core dislocation defect; cf. Presser et al 29 ) and which has already undergone the transition towards globulite formation starting at the center. There is no significant influence on the oxidation rate by the presence of such a small pipe; however, it has acted as a crystallization center.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 7 depicts a radialite (∅137 μm) that has formed around a≈1 μm small micropipe (hollow‐core dislocation defect; cf. Presser et al 29 ) and which has already undergone the transition towards globulite formation starting at the center. There is no significant influence on the oxidation rate by the presence of such a small pipe; however, it has acted as a crystallization center.…”
Section: Resultsmentioning
confidence: 99%
“…The elastic energy of a crystal-growth-related super dislocation is reduced if it forms a hollow core screw dislocation, i.e., a Volterra dislocation (Volterra 1907). Hollow core dislocations occur in SiC (Vetter and Dudley 2001; Presser et al 2008) and in steroid (Stoica et al 2007) crystals, the former having diameters larger than 10 µm and the latter 100 nm. Hollow core dislocation sources for spiral crystal growth were seen in inorganic calcite (Hillner et al 1992).…”
Section: Discussionmentioning
confidence: 99%
“…Typical defect dimensions of voids are several 10s or even 100s of micrometer laterally and 10s of micrometer axially, while pipes have typical diameters of 10s of nanometer up to few micrometer with a depth in the millimeter‐range. In contrast to mechanically introduced scratches the surrounding area of these defects is perfectly crystalline and in case of voids in a relaxed state 11 . Therefore, no accelerated oxidation due to special stress or surface states of SiC must be taken into account.…”
Section: Resultsmentioning
confidence: 99%
“…Both influences are discussed in the light of globulite formation. Regarding the influence of defects, we studied hollow‐core defects (pipes and voids), that are frequently found in SiC wafers 11 …”
Section: Introductionmentioning
confidence: 99%