Scanning Deep Level Transient Spectroscopy

Breitenstein, O.; Heydenreich, J.

doi:10.1016/b978-0-12-353855-0.50013-0

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Scanning Deep-level Transient Spectroscopy1

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1990

2011

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Cited by 4 publications

(1 citation statement)

References 27 publications

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“…SDLTS was first proposed by Petroff and Lang (1977) and was developed by Breitenstein and Heydenreich (1985). SDLTS was first proposed by Petroff and Lang (1977) and was developed by Breitenstein and Heydenreich (1985).…”

Section: Scanning Deep-level Transient Spectroscopymentioning

confidence: 99%

Assessment of Semiconductors by Scanning Electron Microscopy Techniques

Salviati

Lazzarini

Sekiguch³

et al. 2011

Comprehensive Semiconductor Science and Technology

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Section: Scanning Deep-level Transient Spectroscopymentioning

confidence: 99%

Assessment of Semiconductors by Scanning Electron Microscopy Techniques

Salviati

Lazzarini

Sekiguch³

et al. 2011

Comprehensive Semiconductor Science and Technology

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Gettering or generation of the EL2 defects at dislocations in GaAs?

Figielski

Wosiński

Mąkοsa

1992

Phys. Stat. Sol. (a)

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Interrelations between the EL2 defects and dislocations in GaAs crystals are examined. Firstly, it is discussed, on the basis of recent results of high‐pressure experiments, why the dislocation‐related EL2 defects can be unquenchable. Next, the experimental data are presented that show a distinct correlation of the EL2 defect concentration with the distribution of indentation‐induced dislocations in n‐type GaAs crystals. Finally, it is argued that the deformation‐induced enhancement of EL2 concentration is caused by dislocation‐mediated generation of arsenic antisites, while in as‐grown LEC GaAs the correlation between EL2 and dislocations results rather from their common origin.

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Scanning-DLTS investigation of point defect inhomogeneities in semiconducting materials

Breitenstein¹,

Eisenschmidt²

1990

Microelectronic Engineering

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Scanning Deep Level Transient Spectroscopy

Cited by 4 publications

References 27 publications

Assessment of Semiconductors by Scanning Electron Microscopy Techniques

Assessment of Semiconductors by Scanning Electron Microscopy Techniques

Gettering or generation of the EL2 defects at dislocations in GaAs?

Scanning-DLTS investigation of point defect inhomogeneities in semiconducting materials

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