Scanning Cathodoluminescence Microscopy

Parish, Chad M.; Russell, P. E.

doi:10.1016/s1076-5670(07)47001-x

Cited by 35 publications

(21 citation statements)

References 226 publications

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“…In the case of low-dose implant conditions, which is Manuscript lower than the critical dose of amorphization (<10 13 cm −2 ), defects were confirmed to persist after applying RTA even with high-temperature (1100 • C) [3], [4]. We detected and characterized these defects using high-sensitivity optical characterization, specifically cathodoluminescence (CL) [5], [6] and positron annihilation spectroscopy (PAS) [7]. We confirmed the defects to be created by non-equilibrium states that occur during the extremely rapid cooling step of the RTA sequence [3], [4].…”

Section: Introductionmentioning

confidence: 96%

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Sagara

Uedono

Shibata

2015

IEEE Trans. Semicond. Manufact.

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We investigated the thermal behavior of defects remaining in low-dose (<10 13 cm −2 ) arsenic-and boronimplanted Si after high-temperature (1100 • C) rapid thermal annealing (RTA). The defects remaining after RTA were characterized as vacancy-type defects, and confirmed to be created by nonequilibrium states that occur during the extremely rapid cooling step of the RTA sequence. They were gradually removed by applying additional furnace annealing (FA) (i.e., thermal equilibrium heating process) at 300-400 • C. At the range of 500-600 • C, however, carbon-and oxygen-related point defects were newly created. These defects were confirmed to be eliminated at 700 • C, and the crystal quality was significantly improved. When using a rapid thermal process for heat treatment after low-dose impurity implantation, it is necessary to apply an equilibrium thermal treatment at >700 • C to remove residual damage as well as to activate impurities.Index Terms-Residual damage, ion implantation, rapid thermal annealing (RTA), silicon.

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Section: Introductionmentioning

confidence: 96%

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Sagara

Uedono

Shibata

2015

IEEE Trans. Semicond. Manufact.

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“…6,7 For low beam currents the CL intensity is in general proportional to the number of excess carriers at steady state. A lower CL intensity is therefore expected for a probe incident close to a grain boundary, due to loss of some of the carriers to the grain boundary diffusion current.…”

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confidence: 99%

A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics

Mendis

Bowen

Jiang

2010

Applied Physics Letters

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“…The higher‐energy emission regions do not appear as rings around dark spot as expected in the potential barrier but as spots. Under our measurement conditions, the spatial extent of injected electron‐hole pairs estimated by Kanaya–Okayama range is about 200 nm at an acceleration voltage of 5 kV. Generated carriers move by the mechanism of diffusion or drift, further degrading the spatial resolution.…”

Section: Resultsmentioning

confidence: 90%

Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements

Kurai

Higaki

Imura

et al. 2017

Physica Status Solidi (b)

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We carried out spot cathodoluminescence (CL) with scanning electron microscopy (SEM‐CL) of InGaN multiple quantum well (MQW) structures with an In molar fraction of 18% grown on c‐plane sapphire at room temperature, in which formation of a potential barrier around threading dislocations was confirmed in previous spatially resolved photoluminescence measurements with scanning near‐field optical microscopy (SNOM‐PL). We confirmed the suitability of CL measurements for evaluating the local potential barriers near the dislocations. Local emissions around the V‐pits were observed in monochromatic CL mapping images acquired at the higher‐energy side of InGaN emissions at RT and 78 K. The density of the higher‐energy emission regions was smaller than the V‐pit density, indicating the effect of nonradiative recombination. Spot CL spectra around the V‐pits showed shoulders on the higher‐energy side of the InGaN peaks. These observations agree with the SNOM‐PL results acquired from the same samples, indicating that SEM‐CL can be used to evaluate potential barriers. The emission energy difference between the InGaN and higher‐energy emissions estimated by spot CL spectra was compared with that estimated by SNOM‐PL spectra. The energy difference as a function of pit diameter showed a similar trend for both measurement methods, but was slightly smaller for the SEM‐CL results, suggesting that the potential barrier height evaluation is not necessarily quantitative.

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Scanning Cathodoluminescence Microscopy

Cited by 35 publications

References 226 publications

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics

Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements

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