2019
DOI: 10.1007/978-3-030-15612-1_4
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Scanning Capacitance Microscopy for Two-Dimensional Carrier Profiling of Semiconductor Devices

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Cited by 1 publication
(9 citation statements)
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“…As SMIM-C signals and capacitance–voltage characteristics are directly related to the charge carrier concentration, ,,, they can help interpret the dC/dV signals. In particular, a higher charge carrier concentration leads to a smaller change in the SMIM-C signal upon transition from depletion to accumulation . Furthermore, because the maps in Figure were obtained at zero DC voltage, this change in the capacitance signal seems to be a more reliable indicator of the charge concentration.…”
Section: Resultsmentioning
confidence: 99%
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“…As SMIM-C signals and capacitance–voltage characteristics are directly related to the charge carrier concentration, ,,, they can help interpret the dC/dV signals. In particular, a higher charge carrier concentration leads to a smaller change in the SMIM-C signal upon transition from depletion to accumulation . Furthermore, because the maps in Figure were obtained at zero DC voltage, this change in the capacitance signal seems to be a more reliable indicator of the charge concentration.…”
Section: Resultsmentioning
confidence: 99%
“…In particular, a higher charge carrier concentration leads to a smaller change in the SMIM-C signal upon transition from depletion to accumulation. 34 Furthermore, because the maps in Figure 3 were obtained at zero DC voltage, this change in the capacitance signal seems to be a more reliable indicator of the charge concentration. Therefore, we use the capacitance−voltage curves to calculate the maximum and minimum SMIM-C signals, as well as the signal difference (Figure 5).…”
Section: Electrical and Electronic Properties Of Stacked N-type And P...mentioning
confidence: 99%
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