2018
DOI: 10.1016/j.jnoncrysol.2018.04.018
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Scan speed and fluence effects in femtosecond laser induced micro/nano-structures on the surface of fused silica

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Cited by 23 publications
(16 citation statements)
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“…Obviously, the generated structures are perpendicular to the laser polarization. Contrary to these observations, different authors reported on the generation of LSFL on fused silica with an orientation being parallel to the polarization of the laser for both scanning and non-scanning (punctual) cases [12,15,16,36,40]. These parallel structures were never observed in our experiment over the entire parameter range in Figure 2a.…”
Section: Resultscontrasting
confidence: 99%
See 1 more Smart Citation
“…Obviously, the generated structures are perpendicular to the laser polarization. Contrary to these observations, different authors reported on the generation of LSFL on fused silica with an orientation being parallel to the polarization of the laser for both scanning and non-scanning (punctual) cases [12,15,16,36,40]. These parallel structures were never observed in our experiment over the entire parameter range in Figure 2a.…”
Section: Resultscontrasting
confidence: 99%
“…For the non-scanning case, we also observed these parallel LSFL in a previous study, but never found LSFL with a perpendicular orientation [28]. Xu et al [40] found LSFL on fused silica oriented parallel to the polarization of the laser for both, scanning perpendicularly and parallel to the laser polarization. For perpendicular scanning, we also observed parallel-oriented structures in a previous publication [16].…”
Section: Introductionsupporting
confidence: 63%
“…At 800 cm −1 , the spectrum reveals a peak of the symmetric stretching mode of the Si–O–Si (w 3 ). Finally, peaks observed at 1078 and 1250 cm −1 correspond to the Si–O–Si asymmetric stretching mode (w 4 ) with transversal and longitudinal optical modes, respectively [ 22 ]. After sputtering of a 20 nm thin gold layer, the spectrum is dominated by a broad peak consisting of two maxima at 1337 and 1530 cm −1 .…”
Section: Resultsmentioning
confidence: 99%
“…Alternative approaches of large-area structuring are therefore based on dot-structures, hierarchical surface structures, and single-spot matrixes [ 20 , 21 , 22 , 23 ]. Furthermore, the application of metallic and semiconducting thin films, deposited on the substrate surface prior to laser structuring, was demonstrated to be advantageous for the formation of LIPSS on large bandgap materials including sapphire [ 24 , 25 ], glasses [ 26 , 27 ], and silicon [ 28 ].…”
Section: Introductionmentioning
confidence: 99%
“…The peaks for the breathing mode from 4 and 3 membered ring structures in the silica network around 490 cm À1 and 605 cm À1 are observed, which conrm the formation of silica glass aer sintering. [21][22][23] The rising Raman scattering intensity of the Tb 3+ doped glass from 700 cm À1 to 1200 cm À1 comes from the photoluminescence background from Tb 3+ ions excited by the 514 nm laser.…”
Section: Resultsmentioning
confidence: 99%