2022
DOI: 10.1021/acsami.2c18480
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Scaling-Up of Thin-Film Photoelectrodes for Solar Water Splitting Based on Atomic Layer Deposition

Abstract: Atomic layer deposition (ALD) is an established method to prepare protective layers for Si-based photoelectrodes for photoelectrochemical (PEC) water splitting. Although ALD has been widely used in microelectronics and photovoltaics, it remains a great challenge to design simple and effective ALD systems to deposit large and uniform protective films for Si-based photoelectrodes with industrial sizes. This paper describes the design and realization of a simple ALD chamber configuration for photoelectrodes with … Show more

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Cited by 6 publications
(4 citation statements)
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“…272 However, the uniformity, components, thickness, and other associated properties of the photoelectrode materials, protective layer and catalyst deposition cannot be guaranteed in mass production. Therefore, it is necessary to develop a large area or batch thin-film deposition techniques, 273 to overcome this dilemma. Moreover, when operating tandem cells at high current densities, mass transfer and pH gradients become significant concerns.…”
Section: Discussionmentioning
confidence: 99%
“…272 However, the uniformity, components, thickness, and other associated properties of the photoelectrode materials, protective layer and catalyst deposition cannot be guaranteed in mass production. Therefore, it is necessary to develop a large area or batch thin-film deposition techniques, 273 to overcome this dilemma. Moreover, when operating tandem cells at high current densities, mass transfer and pH gradients become significant concerns.…”
Section: Discussionmentioning
confidence: 99%
“…ALD is an established method, by which we have deposited a 50 nm TiO 2 protective layer on industrial-grade 166 mm Si (100) wafers. 58 Another issue is the redesign of the large-size devices, in which the light management, mass transfer, gas separation, etc., need to be carefully considered. Finally, the cost-effectiveness should be another essential factor, which needs a detailed technoeconomic assessment.…”
Section: Conclusion and Perspectivementioning
confidence: 99%
“…First, it is important to deposit films with controllable properties over a large area. ALD is an established method, by which we have deposited a 50 nm TiO 2 protective layer on industrial-grade 166 mm Si (100) wafers . Another issue is the redesign of the large-size devices, in which the light management, mass transfer, gas separation, etc., need to be carefully considered.…”
Section: Conclusion and Perspectivementioning
confidence: 99%
“…For the specific applications in photoelectrocatalysis as well as photovoltaics, the dimensions of the support aforementioned for the LB are really typical of the semi or fully-industrial scale as recently seen for the atomic layer deposition technique dealing with photelectrodes of large area (256 cm 2 ) and silicon wafer (166 cm 2 ). 71 Dilger et al 72 also tried to design 40 cm 2 of LaTiO 2 N photoanodes for water splitting by electrophoretic process, followed by a dip coating and thermal treatment. The volume used for all these depositions by LB or other approaches remains under 100 mL and, most of the time, is in the mL or mL range.…”
Section: Langmuir-blodgett Approach To Scale Up Photoelectrode: Case ...mentioning
confidence: 99%