Scaling up antimonide wafer production: innovation and challenges for epitaxy ready GaSb and InSb substrates

Furlong, Mark J.; Martinez, Rebecca; Amirhaghi, S.; Small, David; Smith, Brian A.; Mowbray, Andrew

doi:10.1117/12.884450

Cited by 7 publications

(3 citation statements)

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“…Previously we have reported on the evolution in crystal growth size at IQE which has been commensurate with the need to meet industry's needs for increasing substrate diameters 9 . This requirement has seen growth processes scaled from small format (2"/3") pullers where chamber sizes permit only 3-8 kg charges to be grown, up to today's new 35 kg processes from which ingots upto 8" in diameter can be pulled.…”

Section: Bulk Crystal Growthmentioning

confidence: 96%

Growth and characterization of ≥6” epitaxy-ready GaSb substrates for use in large area infrared imaging applications

Furlong

Martinez

Tybjerg³

et al. 2015

SPIE Proceedings

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In this paper we report on an industry first; the commercial growth and characterization of >/=6" diameter GaSb substrates that are suitable for use in the fabrication of epitaxially grown, large area MWIR-VLWIR detectors. Results will be presented on the production of single crystal >/=6" GaSb ingots grown by a modified version of the Czochralski (LEC) technique, supported by the analysis of bulk material quality by spatial etch pit density assessments with mm resolution. The electrical quality of 6" GaSb crystals will be assessed. Hall mobility, resistivity and carrier level measurements will be made spatially. High quality, epitaxy-ready type surfaces have been prepared and we will demonstrate how the key surface quality characteristics of roughness, oxide thickness and flatness have been maintained across production processes that scale from 4" to ≥6" wafer formats. Comparisons will be made between ≥6" GaSb and other large diameter compound semiconductor materials produced in volume such as GaAs and InP. We conclude by demonstrating that the commercial production of large diameter GaSb substrates has matured and is thus ready to support the full commercialization of GaSb based detector technologies.

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Section: Bulk Crystal Growthmentioning

confidence: 96%

Growth and characterization of ≥6” epitaxy-ready GaSb substrates for use in large area infrared imaging applications

Furlong

Martinez

Tybjerg³

et al. 2015

SPIE Proceedings

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“…GaSb epi-ready wafers become increasingly important in the fabrication of photodetectors and other optoelectronic devices covering IR spectrum in the 2 -14 μm range [1,2,3]. Demand for high-performance infrared detectors, such as IR focal plane arrays (IRFPA) based on type-II strained layer superlattice (SLS) structures drives the commercial production of GaSb substrates with the epi-ready surface quality.…”

Section: Introductionmentioning

confidence: 99%

Infrared optical and electronic properties in low tellurium doped GaSb substrates for SLS FPA applications

et al. 2016

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Epi-ready GaSb wafers with low absorption coefficients are of a special interest as substrates for molecular beam epitaxy (MBE) growth of material for IR focal plane arrays that operate under back-side illumination configuration, when the substrate is not completely removed. While low absorption coefficient across a broad IR spectral range (~2um-20um) is achievable in GaSb crystals with low Te doping, the control of the doping distribution across the wafers is especially challenging in the mass-production of optically transparent, high-resistivity Te-doped GaSb wafers. In this work, we examine data from the n-type and p-type Te-doped GaSb samples with doping concentration below 1e18 cm-3. The carrier concentration measured by the Hall and the transmission data measured by FTIR spectroscopy are correlated. We perform a rigorous analysis of the absorption coefficient based on the free-carrier absorption mechanism that is dominant for the n-type GaSb and the inter-valence band absorption due to the transitions from the light-hole to the heavy-hole band that is the dominant absorption mechanism for the p-type GaSb. Based on the correlation between the Hall and the FTIR data, carrier concentration profile can be estimated from the non-destructive FTIR transmission mapping of the wafer.

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“…To maximize this goal, large inexpensive substrates of high crystallographic quality are needed. The GaSb substrates, on which InAsSb-based bariodes are currently fabricated, come in sizes up to 3 00 , although 4 00 GaSb wafers are under development [4]. At these sizes, the wafers can accommodate only a few large (megapixel) focal plane arrays (FPAs).…”

Section: Introductionmentioning

confidence: 99%

InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs

Weiss

Klin

Grossmann

et al. 2012

Journal of Crystal Growth

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Scaling up antimonide wafer production: innovation and challenges for epitaxy ready GaSb and InSb substrates

Cited by 7 publications

References 0 publications

Growth and characterization of ≥6” epitaxy-ready GaSb substrates for use in large area infrared imaging applications

Growth and characterization of ≥6” epitaxy-ready GaSb substrates for use in large area infrared imaging applications

Infrared optical and electronic properties in low tellurium doped GaSb substrates for SLS FPA applications

InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs

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