Scaling of the temperature dependent Hall effect in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">La</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sr</mml:mi></mml:mrow>

Hwang, H. Y.; Batlogg, B.; Takagi, H.; Kao, H. L.; Kwo, J.; Cava, R. J.; Krajewski, J. J.; Peck, W. F.

doi:10.1103/physrevlett.72.2636

Cited by 395 publications

(305 citation statements)

References 16 publications

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“…Our data suggest that the FS patch dominates the transport in the lightly doped samples around 300 K. It is worthy to note that the similar situation exists in La 2−x Sr x CuO 4 system. In this case, the value of eR H x/V is also close to 1 for lightly doping samples 19 , and eR H x/V sign changes in heavily overdoped samples 27 . In ordinary single band model, the lower limit of eR H x/V in hole-doped sample is x 1−|x| .…”

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confidence: 76%

Influence of doping level on the Hall coefficient and on the thermoelectric power inNd2−xCexCuO4+δ

Wang

et al. 2005

Phys. Rev. B

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Hall coefficient RH and thermoelectric power TEP are studied systematically in the single crystals N d2−xCexCuO4 (NCCO) with different x from underdoped to overdoped regime. RH and TEP decrease and change their sign from negative to positive with increasing doping level x. A striking feature is that the temperature dependence of the Hall angle follows a T 4 behavior in the underdoped regime, while a T 2 law in the overdoped regime. This behavior is closely related to the evolution of Fermi surface with doping level observed by the angle-resolved photoemission spectroscopy (ARPES).PACS numbers: 74.72. Jt, 74.25.Fy, 74.25.Jb N d 2−x Ce x CuO 4+δ (NCCO) belongs to a quite interesting class of materials which is called as electron doped cuprates. With the substitution of Nd by Ce, the electrons were injected to the CuO 2 plane since the Hall coefficient (R H ) and the thermoelectric power (TEP) remains negative. 1 However, R H and thermoelectric power gradually increase and eventually change sign to positive with further doping Ce. 2,3,4,5,6,7 Similar feature has been observed with changing the oxygen content. 4,8 In another ntype cuprate P r 2−x Ce x CuO 4+δ (PCCO), the change of R H sign with temperature 9,10,11 and doping 12 were also observed. Those strange behaviors strongly indicate that at moderate doping, NCCO and PCCO have two bands with different types of charge carriers, one is hole carrier and the other is electron carrier. The Fermi surface (FS) obtained by ARPES indirectly supports this conclusion. Armitage et al. 13 suggested that the existence of FS patch in the slightly doped samples is marked by an electron pocket at (π, 0) and the FS patch gradually changes to a large hole-like FS with the appearance of section near the zone diagonal (π/2, π/2) of the Brillouin zone with increasing doping. The presence of the two separate FS pockets may result from the band folding effect induced by the antiferromagnetic correlations. 14 The theoretical calculations indicate that the two FS pockets can be effectively described as a two-band system. 14,15 Recently, Luo and Xiang proposed a weakly coupled two-band model with d x 2 −y 2 pairing symmetry to account for the anomalous temperature dependence of superfluid density (ρ s ) in n-type cuprate superconductor very well. 16 Hall angle is another interesting feature. It is well known that Hall angle follows a T 2 law in hole doped system. Anderson 17 emphasized that the transport is governed by two different scattering time for the high T c cuprates, τ tr (T −1 ) for in-plane resistivity and τ H (T −2 ) for Hall angle. Another point of view is that the cotangent of Hall angle (cotθ H ) is proportional to the square of the scattering rate which can be independently measured by the zero-field resistivity. 18 Recently, a striking finding by Ando et al. 19 is that the temperature dependence of resistivity nearly follows T 2 in lightly doped YBCO and LSCO. Their finding gives another picture that in lightly hole-doped cuprates the transport behavior is Fermi-liqui...

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confidence: 76%

Influence of doping level on the Hall coefficient and on the thermoelectric power inNd2−xCexCuO4+δ

Wang

et al. 2005

Phys. Rev. B

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“…13͒ led several authors to the conclusion that low-energy kinetics of overdoped oxides is inconsistent with the Fermi-liquid picture 14,11 and with the spin-charge separation picture. 9 In particular, semiconductorlike scaling with x of dc conductivity of La 2Ϫx Sr x CuO 4 for a wide temperature and doping region 10 and the linear low-temperature resistivity as well as the linear Hall effect in overdoped Tl 2 Ba 2 CuO 6 , 11 have been observed.…”

Section: Introductionmentioning

confidence: 98%

Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-Tcoxides

1996

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Hole bipolaron band structure with two flat anisotropic bands is derived for oxide superconductors. Strong anisotropy leads to one-dimensional localization in a random field which explains the metal-like value of the Hall effect and the semiconductorlike doping dependence of resistivity of overdoped oxides. Doping dependence of T c and H (0) as well as the low-temperature dependence of resistivity, of the Hall effect, H c2 (T) and robust features of angle-resolved photoemission spectroscopy of several high-T c copper oxides are explained.

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“…In order to estimate the carrier concentration in our samples, following the method proposed by Ando et al 45 , we have measured the Hall coefficient R H in several crystals 46,47 and compared the magnitudes of the normalized Hall coefficient 47 with the values reported for LSCO 48 . Subsequently, we estimated p in other samples using the empirical (nearly linear) relation between the excess Bi, x, and p. In the inset of Fig.…”

Section: Methodsmentioning

confidence: 99%

Metal-to-insulator crossover and pseudogap in single-layerBi2+xSr2−xCu1+<

Vedeneev

Maude

2004

Phys. Rev. B

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The in-plane ρ ab (H) and the out-of-plane ρc(H) magneto-transport in magnetic fields up to 28 T has been investigated in a series of high quality, single crystal, hole-doped La-free Bi2201 cuprates for a wide doping range and over a wide range of temperatures down to 40 mK. With decreasing hole concentration going from the overdoped (p=0.2) to the underdoped (p=0.12) regimes, a crossover from a metallic to and insulating behavior of ρ ab (T ) is observed in the low temperature normal state, resulting in a disorder induced metal insulator transition. In the zero temperature limit, the normal state ratio ρc(H)/ρ ab (H) of the heavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, in striking contrast with that observed in La-doped Bi2201 and LSCO systems. Our data strongly support that that the negative out-of-plane magnetoresistance is largely governed by interlayer conduction of quasiparticles in the superconducting state, accompanied by a small contribution of normal state transport associated with the field dependent pseudogap. Both in the optimal and overdoped regimes, the semiconducting behavior of ρc(H) persists even for magnetic fields above the pseudogap closing field Hpg. The method suggested by Shibauchi et al. (Phys. Rev. Lett. 86, 5763, (2001)) for evaluating Hpg is unsuccessful for both under-and overdoped Bi2201 samples. Our findings suggest that the normal state pseudogap is not always a precursor of superconductivity.

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Scaling of the temperature dependent Hall effect inLa2−xSr

Cited by 395 publications

References 16 publications

Influence of doping level on the Hall coefficient and on the thermoelectric power inNd2−xCexCuO4+δ

Influence of doping level on the Hall coefficient and on the thermoelectric power inNd2−xCexCuO4+δ

Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-Tcoxides

Metal-to-insulator crossover and pseudogap in single-layerBi2+xSr2−xCu1+<

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