Scaling of the quantum Hall plateau-plateau transition in graphene

Giesbers, A. J. M.; Zeitler, U.; Пономаренко, Л. А.; Yang, Rui; Новоселов, К. С.; Geǐm, A. K.; Maan, J. C.

doi:10.1103/physrevb.80.241411

Cited by 62 publications

(74 citation statements)

References 29 publications

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“…In a plateau-insulator quantum phase transition passing the last plateau in exfoliated graphene, κ≈0.58 is obtained [31]. Here, we demonstrate that the (n=0)-to-(n=1) inter-plateau transition in epitaxial graphene also exhibits behavior consistent with scaling in the same universality class as (1) the same transition [30] in the mechanically exfoliated graphene, and (2) various inter-plateau transitions in semiconductor-hosted 2D electron systems [27][28][29]. Unfortunately, we are not able to investigate the scaling behavior for higher Landau level transitions, since they are not sufficiently well-developed in our samples.…”

Section: Bsupporting

confidence: 64%

“…In exfoliated graphene [30], κ≈0.37 has been reported for the half width in ρ xx of the first Landau level and κ≈0.41 for the derivatives (d xy /dB) at the critical point of the plateau (n=0) to plateau (n=1) transition. In a plateau-insulator quantum phase transition passing the last plateau in exfoliated graphene, κ≈0.58 is obtained [31].…”

Section: Bmentioning

confidence: 99%

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Quantum-Hall plateau−plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Shen

Neal

Bolen

et al. 2012

Journal of Applied Physics

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We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic layer deposition process. At low temperatures, the devices demonstrate a strong field effect by the top gate with an on/off ratio of ~7 and an electron mobility up to ~3250 cm 2 /Vs. After the observation of the half-integer quantum Hall effect for monolayer epitaxial graphene films, detailed magneto-transport measurements have been carried out including varying densities, temperatures, magnetic fields and currents. We study the width of the distinguishable quantum-Hall plateau to plateau transition (Landau level index n=0 to n=1) as temperature (T) and current are varied. For both gate voltage and magnetic field sweeps and T>10 K the transition width goes as T  with exponent ~0.42. This universal scaling exponent agrees well with those found in III-V heterojunctions with short range alloy disorders and in exfoliated graphene.

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Section: Bsupporting

confidence: 64%

Section: Bmentioning

confidence: 99%

Quantum-Hall plateau−plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Shen

Neal

Bolen

et al. 2012

Journal of Applied Physics

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“…The breakdown current rising with field to very large values [ Fig. 3(a)] corresponds to T * reaching extremely large values in excess of 10 4 K -at least an order of magnitude larger than that observed in GaAs [28] and more recently in exfoliated graphene [13,29].…”

Section: Graphene Was Grown At 2000mentioning

confidence: 96%

Anomalously strong pinning of the filling factorν=2in epitaxial graphene

et al. 2011

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We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Siterminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10 10 in the Hall resistance quantization measurements. Graphene is believed to offer an excellent platform for QHE metrology due to the large energy separation between Landau levels (LL) resulting from the Dirac-type "massless" electrons specific for its band structure [12]. The Hall resistance quantization with an accuracy of 3 parts in 10 9 has already been established [7] in Hall-bar devices manufactured from epitaxial graphene grown on Si-terminated face of SiC (SiC/G). However, for graphene to be practically employed as an embodiment of a quantum resistance standard, it needs to satisfy further stringent requirements [11], in particular with respect to robustness over a range of temperature, magnetic field and measurement current. A high measurement current, which a device can sustain at a given temperature without dissipation, is particularly important for precision metrology as it defines the maximum attainable signalto-noise ratio.The extent of the QHE plateaux in conventional 2D electron systems is, usually, set by disorder and temperature. Disorder pins the Fermi energy in the mobility gap of the 2D system, which suppresses dissipative transport at low temperatures over a finite range of magnetic fields around the values corresponding to exactly filled LLs. These values can be calculated from the carrier density n s determined from the low-field Hall resistivity measurements and coincide with the maximum non-dissipative current, the breakdown current. Thus, the breakdown current in conventional two-dimensional semicondutors peaks very close to the field values where the filling factor ν is an even integer [11]. Though less studied experimentally, the behaviour of the breakdown current on the plateaux for the exfoliated graphene, including the ν = 2 plateau corresponding to the topologically protected N = 0 LL, looks quite similar [13].In this Brief Report we explore the robustness of the Hall resistance quantization in SiC/G. Unlike the QHE in conventional 2D systems, where the carrier density is independent of magnetic field, here specifically to SiC/G, we find that the carrier density in graphene varies with magnetic field due to the charge transfer between surface donor states in SiC and graphene. Most importantly, we find magnetic field intervals of several Tesla, where the carrier density in graphene increases linearly with the magnetic field, resulting ...

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“…Further information about the nature of the lowest Landau levels in graphene has been recently obtained in thermal activation experiments, [9][10][11][12][13] showing that the zeroth Landau level (n = 0) is much sharper than the first and higher Landau levels. These observations are the main motivation of the theoretical study presented in this paper.…”

Section: Introductionmentioning

confidence: 99%

Correlated random hopping disorder in graphene at high magnetic fields: Landau level broadening and localization properties

2011

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We study the density of states and localization properties of the lowest Landau levels of graphene at high magnetic fields. We focus on the effects caused by correlated long-range hopping disorder, which, in exfoliated graphene, is induced by static ripples. We find that the broadening of the lowest Landau level shrinks exponentially with increasing disorder correlation length. At the same time, the broadening grows linearly with magnetic field and with disorder amplitudes. The lowest Landau level peak shows a robust splitting, whose origin we identify as the breaking of the sublattice (valley) degeneracy.

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Scaling of the quantum Hall plateau-plateau transition in graphene

Cited by 62 publications

References 29 publications

Quantum-Hall plateau−plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Quantum-Hall plateau−plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Anomalously strong pinning of the filling factorν=2in epitaxial graphene

Correlated random hopping disorder in graphene at high magnetic fields: Landau level broadening and localization properties

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