2017
DOI: 10.1103/physrevlett.118.246801
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Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics

Abstract: We report on the scaling behavior of V-doped (Bi,Sb)_{2}Te_{3} samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a sufficiently thick layer, we find scaling behavior matching the flow diagram of two parallel conducting topological surf… Show more

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Cited by 84 publications
(74 citation statements)
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“…The signatures of the topological magnetoelectric effect, a.k.a. static axion electrodynamics, were recently reported as quantized magneto-optical effects in TIs [41][42][43], and quantized magneto and electrical resistance changes in artificial antiferromagnetic heterostructures of magnetically doped TIs [44][45][46]. Finally, dynamical axion quasiparticles (AQ) in the form of magnetic fluctuations were predicted in magnetically doped TIs (MTI) [35], spin-orbit coupled Mott insulators [47], in MTI superlattices [40], and also an inverse chiral magnetoelectric effect was suggested [48].…”
mentioning
confidence: 99%
“…The signatures of the topological magnetoelectric effect, a.k.a. static axion electrodynamics, were recently reported as quantized magneto-optical effects in TIs [41][42][43], and quantized magneto and electrical resistance changes in artificial antiferromagnetic heterostructures of magnetically doped TIs [44][45][46]. Finally, dynamical axion quasiparticles (AQ) in the form of magnetic fluctuations were predicted in magnetically doped TIs (MTI) [35], spin-orbit coupled Mott insulators [47], in MTI superlattices [40], and also an inverse chiral magnetoelectric effect was suggested [48].…”
mentioning
confidence: 99%
“…The anomalous Hall effect (AHE), despite being first reported over a hundred years ago, [1] remains of significant modern research interest as its investigation in novel magnetic materials continues to yield rich physics. Recent examples of this are the quantum anomalous Hall effect [2][3][4][5][6][7][8][9][10][11][12], which offers both potential for metrological applications [13,14] and for the academic study of axion electrodynamics [5,12,15,16], as well as reports on alleged contribution to the Hall effect [17][18][19][20][21][22][23][24] associated with skyrmion magnetic textures.…”
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confidence: 99%
“…All investigations are performed on samples with a standard Hall bar geometry prepared by optical lithography, and are equipped with an electrostatic gate that allows tuning of the Fermi level in the layers. The topological insulator heterostructures are (Bi,Sb) 2 Te 3 based, with the magnetic layers doped by V. They are grown using molecular beam epitaxy (MBE) on insulating, hydrogen passivated Si (111) substrates, and are covered in-situ with 10 nm of Te to protect the surface from aging [12,31]. The Bi/Sb ratio is 0.79/0.21 for all samples.…”
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confidence: 99%
“…[23]. Grauer et al [25] also claimed the observation of an 'axion insulator' in a uniformly doped QAH sample in the 3D regime. However, the presence of the 1D chiral edge mode of the 3D QAH state implies that side surfaces are not gapped, thus violating the condition (ii) noted above.…”
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confidence: 99%
“…Furthermore, the observed large  xx also exclude the existence of helical side surface states in the sandwich heterostructure, reflecting the effect of quantum confinement. Since there is no conduction channel in the 3-5-3 sandwich heterostructure with antiparallel magnetization alignment, the axion insulator state is much more insulating than that induced by scattering from multi-magnetic domains in uniformly magnetically doped QAH samples [10][11][12][13][14][15]25,31,32]. Thus, the external  0 H can turn OFF/ON the 1D chiral edge state in antiparallel/parallel magnetization alignment regions, leading to an 'OFF/ON' ratio of ~for  xx .…”
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confidence: 99%