Scaling of Surface Roughness in Obliquely Sputtered Chromium Films

Bellac, D. Le; Niklasson, Gunnar A.; Granqvist, C.G.

doi:10.1209/0295-5075/32/2/011

Cited by 32 publications

(22 citation statements)

References 28 publications

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“…44 These facts indicate that shadowing effects could play an important role in the film dynamics as other authors have already suggested. 16,36,41 Shadowing effects also imply that regions located at higher surface positions ͑peaks or protrusions͒ grow faster at the expense of others ͑valleys͒, which is known to lead to unstable growth morphologies with large ␤ values, 45 analogous to the diffusional instabilities found in electrodeposition. 17,29 Available models of shadowing in 2 + 1 dimensions predict 1 / z =1/3 and ␤ =1.…”

Section: Discussionmentioning

confidence: 99%

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

et al. 2006

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We study surface kinetic roughening of TiN films grown on Si͑100͒ substrates by dc reactive sputtering. The surface morphology of films deposited for different growth times under the same experimental conditions were analyzed by atomic force microscopy. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening is characterized by a set of local exponent values ␣ loc = 1.0 and ␤ loc = 0.39, and global exponent values ␣ = 1.7 and ␤ = 0.67, with a coarsening exponent of 1 / z = 0.39. These properties are correlated to the local height-difference distribution function obeying power-law statistics. We associate this intrinsic anomalous scaling with the instability due to nonlocal shadowing effects that take place during thin-film growth by sputtering.

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Section: Discussionmentioning

confidence: 99%

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

et al. 2006

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“…16,18,19 Shadowing effects imply a scenario in which one type of region, usually those located at higher surface positions ͑"bumps"͒, grows faster at the expense of others ͑"valleys"͒, which is known to lead to unstable growth morphologies with large ␤ values. 40 Models of shadowing in 2 + 1 dimensions predict 1 / z =1/3 and ␤ =1. 40 However, recently, Yu and Amar have studied theoretically the dynamic scaling of ballistic deposition with shadowing on unidimensional substrates.…”

Section: Discussionmentioning

confidence: 99%

Growth dynamics of reactive-sputtering-deposited AlN films

Auger

Vázquez

Sánchez

et al. 2005

Journal of Applied Physics

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͑ ͒We have studied the surface kinetic roughening of AlN films grown on Si͑100͒ substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a ͑002͒ preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent ␤ = 0.37± 0.03. In this regime a superrough scaling behavior is found with the following exponents: ͑i͒ Global exponents: roughness exponent ␣ = 1.2± 0.2 and ␤ = 0.37± 0.03 and coarsening exponent 1/z = 0.32± 0.05; ͑ii͒ local exponents: ␣ loc =1, ␤ loc = 0.32± 0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively.

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“…[1][2][3][4][5][6] Even though e-beam or resistively heated evaporation sources are commonly used for this purpose due to their high directionality, sputtering has also been used to obtain nanostructured systems by GLAD. [7][8][9][10][11][12][13][14] In this case, the sputtering gas pressure, P g , is obviously a crucial parameter in the formation of the columnar structures, trying to be minimized in order to reduce the number of collisions of the sputtered atoms in the gas phase and therefore to increase the directionality of the sputtered material toward the substrate. P g determines the mean free path, , of the vapor flux that leaves the target in their way to the substrate.…”

Section: Instituto De Ciencia De Materiales De Sevilla (Csic-mentioning

confidence: 99%

Tilt angle control of nanocolumns grown by glancing angle sputtering at variable argon pressures

García-Martín

Álvarez

Romero‐Gómez

et al. 2010

Applied Physics Letters

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We show that the tilt angle of nanostructures obtained by glancing angle sputtering is finely tuned by selecting the adequate argon pressure. At low pressures, a ballistic deposition regime dominates, yielding high directional atoms that form tilted nanocolumns. High pressures lead to a diffusive regime which gives rise to vertical columnar growth. Monte Carlo simulations reproduce the experimental results indicating that the loss of directionality of the sputtered particles in the gas phase, together with the self-shadowing mechanism at the surface, are the main processes responsible for the development of the columns.

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Scaling of Surface Roughness in Obliquely Sputtered Chromium Films

Cited by 32 publications

References 28 publications

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

Growth dynamics of reactive-sputtering-deposited AlN films

Tilt angle control of nanocolumns grown by glancing angle sputtering at variable argon pressures

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