Scaling of diffusion-mediated island growth in iron-on-iron homoepitaxy

Stroscio, Joseph A.; Pierce, Daniel T.

doi:10.1103/physrevb.49.8522

Cited by 282 publications

(152 citation statements)

References 14 publications

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“…For Fe/Fe, Stroscio et al derived a slightly higher value of ͑0.45Ϯ0.05͒ eV from STM inferred island densities between 300 and 530 K. 7,13 For homoepitaxial growth on Cu͑100͒, Dürr et al found from a low-energy electron diffraction ͑LEED͒ analysis of island separations as a function of temperature E m ϭ͑0.36Ϯ0.03͒ eV, 3 which is quite close to our value. ͓Note that there are different experimental values in the literature for Cu/ Cu͑100͒: 0.28Ϯ0.06 eV ͑Ref.…”

Section: Nucleation and Critical Nucleus Sizesupporting

confidence: 74%

“…Later on, the sizes of the critical nuclei were determined by the scaling behavior of the island size distribution. 13 Brune et al have determined the critical island size independent of nucleation theory for Ag/Pt͑111͒, either by direct measurement of the mean island sizes in the very initial stages of nucleation 8 or by measuring the temperature threshold for Ostwald ripening of dimers.…”

Section: Introductionmentioning

confidence: 99%

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Initial stages of Cu epitaxy on Ni(100): Postnucleation and a well-defined transition in critical island size

et al. 1996

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We present a comprehensive study of the nucleation kinetic of Cu on Ni͑100͒ using variable-temperature scanning tunneling microscopy. The analysis of the saturation island density as a function of substrate temperature and deposition rate reveals that the smallest stable island abruptly changes from a dimer to a tetramer. From the Arrhenius plot, the migration barrier E m ϭ͑0.35Ϯ0.02͒ eV, as well as the dimer bond energy E b ϭ͑0.46Ϯ0.19͒ eV, has been deduced. For low ratios between the migration constant D and flux R (D/RϽ10 4 ), nucleation and island growth take place not only during, but also after deposition. In this postnucleation regime, the final island density and island size distribution are no more determined by the competition between flux and monomer migration, but solely by the monomer concentration present immediately after deposition. Therefore, the island density becomes independent of substrate temperature and flux, and the scaled island size distribution closely resembles that of statistic growth ͑adatom smallest stable island͒. The experimental results are compared with simulations using rate equations. ͓S0163-1829͑96͒10948-6͔

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Section: Nucleation and Critical Nucleus Sizesupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Initial stages of Cu epitaxy on Ni(100): Postnucleation and a well-defined transition in critical island size

et al. 1996

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“…[22] Dynamic scaling was first introduced to describe 2D islanding and was substantiated by computer simulations [20,21,22] and experimental studies both in homo [23,24] and heteroepitaxial [25,26,27] growth. Ebiko et al [28] were the first to show the applicability of Eq.…”

mentioning

confidence: 99%

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

Arciprete

Placidi

Sessi

et al. 2006

Applied Physics Letters

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The two- to three-dimensional growth mode transition in the InAs∕GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges.

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“…2 is for irreversible attachment; the other two panels Fig. 2 The island size distribution, as given by KMC (squares) and LS (circles) methods, in comparison with STM experiments (triangles) on Fe/Fe(001) [44]. The reversibility increases from top to bottom include reversibility that will be discussed below.…”

Section: Nucleation and Submonolayer Growthmentioning

confidence: 99%

Growth, Structure and Pattern Formation for Thin Films

Caflisch¹

2008

J Sci Comput

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An epitaxial thin film consists of layers of atoms whose lattice properties are determined by those of the underlying substrate. This paper reviews mathematical modeling, analysis and simulation of growth, structure and pattern formation for epitaxial systems, using an island dynamics/level set method for growth and a lattice statics model for strain. Epitaxial growth involves physics on both atomistic and continuum length scales. For example, diffusion of adatoms can be coarse-grained, but nucleation of new islands and breakup for existing islands are best described atomistically. In heteroepitaxial growth, mismatch between the lattice spacing of the substrate and the film will introduce a strain into the film, which can significantly influence the material structure, for example leading to formation of quantum dots. Technological applications of epitaxial structures, such as quantum dot arrays, require a degree of geometric uniformity that has been difficult to achieve. Modeling and simulation may contribute insights that will help to overcome this problem. We present simulations that combine growth and strain showing the structure of nanocrystals and the formation of patterns in epitaxial systems.

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Scaling of diffusion-mediated island growth in iron-on-iron homoepitaxy

Cited by 282 publications

References 14 publications

Initial stages of Cu epitaxy on Ni(100): Postnucleation and a well-defined transition in critical island size

Initial stages of Cu epitaxy on Ni(100): Postnucleation and a well-defined transition in critical island size

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

Growth, Structure and Pattern Formation for Thin Films

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