Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance

Zhang, Shen; Wang, Yibo; Zeng, Qingqi; Zheng, Xinliang; Yang, Jing; Wang, Zhaosheng; Xi, Chuanying; Wang, Binbin; Zhou, Min; Huang, Rongjin; Wei, Hongxiang; Yao, Yuan; Wang, Shouguo; Parkin, S. S. P.; Felser, Claudia; Liu, Enke; Shen, Baogen

doi:10.1073/pnas.2208505119

Cited by 9 publications

(5 citation statements)

References 62 publications

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“…For pristine CoS 2 , the AHC evaluated by varying the Fermi energy displays a peak value at ‐60 meV (See Figure S5 , Supporting Information for detail), in which the AHC as a function of the energy is consistent with the previous report. [ 27 ] The momentum‐dependent out‐of‐plane BC (Ω z ) in the k z = 0 plane integrated up to ‐60 meV was then calculated, as shown in Figure 4 a . Four hotspots were observed near M ‐points; therefore, the BC is mainly contributed from the region around M (π, π, 0)‐points with small k z values, given the strong suppression of BC around k z = π plane and much smaller peak values in the BC around the Weyl points observed in the M (0, π, π)‐points in the k x = 0 plane (see Sections S2 and S3 , Supporting Information for details).…”

Section: Resultsmentioning

confidence: 99%

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Tunable Colossal Anomalous Hall Conductivity in Half‐Metallic Material Induced by d‐Wave‐Like Spin‐Orbit Gap

Choi,

Park,

Kyung

et al. 2024

Advanced Science

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The anomalous Hall conductivity (AHC) in magnetic materials, resulting from inverted band topology, has emerged as a key adjustable function in spin‐torque devices and advanced magnetic sensors. Among systems with near‐half‐metallicity and broken time‐reversal symmetry, cobalt disulfide (CoS2) has proven to be a material capable of significantly enhancing its AHC. In this study, the AHC of CoS2 is empirically assessed by manipulating the chemical potential through Fe‐ (hole) and Ni‐ (electron) doping. The primary mechanism underlying the colossal AHC is identified through the application of density functional theory and tight‐binding analyses. The main source of this substantial AHC is traced to four spin‐polarized massive Dirac dispersions in the kz = 0 plane of the Brillouin zone, located slightly below the Fermi level. In Co0.95Fe0.05S2, the AHC, which is directly proportional to the momentum‐space integral of the Berry curvature (BC), reached a record‐breaking value of 2507 Ω−1cm−1. This is because the BCs of the four Dirac dispersions all exhibit the same sign, a consequence of the d‐wave‐like spin‐orbit coupling among spin‐polarized eg orbitals.

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Section: Resultsmentioning

confidence: 99%

“…[ 26 ] Another study presented correlations of a large linear positive magnetoresistance of CoS 2 with Berry curvature, suggesting that the masses of Weyl nodes near the Fermi level are key sources of Berry curvature. [ 27 ]…”

Section: Introductionmentioning

confidence: 99%

Tunable Colossal Anomalous Hall Conductivity in Half‐Metallic Material Induced by d‐Wave‐Like Spin‐Orbit Gap

Choi,

Park,

Kyung

et al. 2024

Advanced Science

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“…Band inversion, where the minority-spin electron pocket crosses a majority-spin e g band about 0.040 eV above E F results in a 0.015 eV gap at the crossing point. Recent work confirmed this feature ( 10 ), and revealed an exceptionally low residual resistivity and high positive magnetoresistance ( 11 ) that are associated with Weyl points at E F .…”

mentioning

confidence: 81%

Influence of topology on the phase transition of a ferromagnetic metal

Zhang,

He,

Chen

et al. 2023

Proc. Natl. Acad. Sci. U.S.A.

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The topological ferromagnet CoS 2 exhibits an anhysteretic, weakly first-order transition at the Curie temperature of 119.8 K with a tricritical point µ 0 H tcp at 0.034 T. Magnetic symmetry and the mixing of majority and minority spin e g bands at a subband crossing just above the Fermi level produce a topological component of the magnetization that leads to a negative M 3 term in the Landau free energy. The position of the Fermi level relative to the subband crossing is critical for controlling the order of the transition. Hole doping in Co 0.89 Fe 0.11 S 2 drains the minority-spin e g pocket and results in a normal second-order phase transition. Electron doping in Co 0.94 Ni 0.06 S 2 raises the Fermi level toward the subband gap, producing a strongly first-order transition with 15 K hysteresis. Our results demonstrate a relation between topological electronic structure and thermal hysteresis at the Curie point, which may help in the search for magnetocaloric materials.

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“…这些都得益于磁性拓扑材料的大内禀反常霍尔电导的特点. 磁性拓扑材料中强贝利曲率的存在, 还产生了一系列非常规的输运行为 [26] . 在磁性外尔半金属CoS 2 中, 费米能级处的贝利曲率可以导致纵向磁电阻随磁场线性增大, 产生线性正磁电阻 [27] .…”

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Coupling between magnetism and topology: From fundamental physics to topological magneto-electronics

Liu

2024

Acta Phys. Sin.

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Magnetism and topological physics are both well-developed disciplines, and their combination is a demand and foundation for the development of next-generation magneto-electronics. Magnetic topological materials are important products of coupling between magnetic order and topological physics, providing material carrier and regulatory degrees of freedom for novel topological physics. Magnetic Weyl semimetals realized Weyl fermion states under time-reversal symmetry breaking, leading to a host of novel magnetic, electric, thermal, and optical effects through enhanced Berry curvature originating from topology. The interaction between Weyl electrons and magnetic order also establishes topological electronic physics as a new principle and driving force for magneto-electronic applications. At present, the primary task and characteristic of the first development stage of magnetic topological materials is to discover new states and effects, while the understanding of interaction between topologically nontrivial electrons in momentum space and magnetic order in real space has received attention of researchers. The comprehensive advances of these two stages will accumulate the physical foundation and application explorations for topological magneto-electronics. This paper focuses on the two development stages of magnetic topological materials and discusses three aspects: (i) proposal and realization of strategy for magnetic topological materials; (ii) exploration of electronic states with nontrivial topology under uniform magnetic order and their associated novel physical properties; (iii) the interaction between localized magnetic states and topological electrons. It provides an in-depth discussion on current hot topics and development trends in the field, and future development in topological magneto-electronics, thereby assisting in the future development of topological spin quantum devices.

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Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance

Cited by 9 publications

References 62 publications

Tunable Colossal Anomalous Hall Conductivity in Half‐Metallic Material Induced by d‐Wave‐Like Spin‐Orbit Gap

Tunable Colossal Anomalous Hall Conductivity in Half‐Metallic Material Induced by d‐Wave‐Like Spin‐Orbit Gap

Influence of topology on the phase transition of a ferromagnetic metal

Coupling between magnetism and topology: From fundamental physics to topological magneto-electronics

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