Abstract:A modeling approach to study advanced floating body Z-RAM memory cells is developed. In particular, the scalability of the cells is investigated. First, a Z-RAM cell based on a 50nm gate length double-gate structure corresponding to state of the art technology is studied. A bi-stable behavior essential for Z-RAM operation is observed even in fully depleted structures. It is demonstrated that by adjusting the supply source-drain and gate voltages the programming window can be adjusted. The programming window is… Show more
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