Scaling behavior of the critical current in clean epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>Ba</mml:mtext><mml:msub><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mtext>Fe</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Co</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow><mml:mn

Iida, K.; Hänisch, Jens; Thersleff, Thomas; Kurth, F.; Kidszun, M.; Haindl, S.; Hühne, Ruben; Schultz, L.; Holzäpfel, B.

doi:10.1103/physrevb.81.100507

Cited by 79 publications

(111 citation statements)

References 23 publications

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“…other 122-type films [7,26,28,29] in similar ranges of H and T. The BaFe 2 As 2 :P epitaxial film obtained in this study exhibited a lower anisotropy than those of BaFe 2 As 2 :P [7] and BaFe 2 As 2 :Co/Fe buffer. [29] Moreover, the anisotropy obtained is much lower than that of the SL thin films, [28] and is comparable to that of the BaFe 2 As 2 :P films with artificial pinning centers created by BaZrO 3 nanoparticles. [26] As discussed above, the strong vortex pinning and the isotropic J c properties were achieved by decreasing the growth rate for the BaFe 2 As 2 :P epitaxial films.…”

Section: Junction Devicesmentioning

confidence: 95%

“…3(a). [26][27][28][29][30][31][32] Moreover, at 9 T, J c H//c is 0.8 MA/cm 2 and the pinning force is 72 GN/m 3 .…”

Section: Junction Devicesmentioning

confidence: 99%

“…the film-substrate interface (see Supplementary Figures S1(a) and (b) for the cross-sectional bright-field STEM image and EDXS spectra) [18] , sharply different from the result of BaFe 2 As 2 :Co films grown by PLD using a KrF excimer laser [19] . In the latter report, the Fe impurity is epitaxially grown at the interface.…”

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confidence: 99%

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High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers

Sato

Hiramatsu

Kamiya

et al. 2014

Applied Physics Letters

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We report herein a high and isotropic critical-current density J c for BaFe 2 (As,P) 2 epitaxial films. The isotropy of J c with respect to the magnetic-field direction was improved significantly by decreasing the film growth rate to 2.2 Å/s. The low growth rate served to preferentially align dislocations along the c-axis, which work well as c-axis vortex-pinning centers. Because of the intentional introduction of effective pinning, the absolute J c at 9 T was larger than that obtained for other iron-based superconductors and conventional alloy superconducting wires.

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Section: Junction Devicesmentioning

confidence: 95%

“…3(a). [26][27][28][29][30][31][32] Moreover, at 9 T, J c H//c is 0.8 MA/cm 2 and the pinning force is 72 GN/m 3 .…”

Section: Junction Devicesmentioning

confidence: 99%

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High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers

Sato

Hiramatsu

Kamiya

et al. 2014

Applied Physics Letters

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“…30 In contrast, at high pulse energy, the DR was too high to complete the surface reconstruction, leading to the increased FWHMs with increasing pulse energy, completing the inverted bell-like shape of the FWHM. Iida et al 28,29 also reported epitaxial growth of Ba(Fe,Co) 2 As 2 films using a KrF excimer laser, but they need to use a Fe buffer layer to obtain good epitaxial films. This would be because that their laser power was in the range of 3-5 J/cm 2 , which is much lower than our optimum values (see Table I), and their substrate-to-target distance was longer (50 mm) than that of our PLD growth chamber (30 mm); therefore, we speculate that the above-discussed supersaturation regime is not attained due to the low density and the low kinetic energies of the deposition precursors, and consequently the Fe buffer layer is required to assist improved epitaxial growth.…”

mentioning

confidence: 99%

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

Hiramatsu

Sato

Katase

et al. 2014

Applied Physics Letters

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We heteroepitaxially grew cobalt-doped BaFe 2 As 2 films on (La,Sr)(Al,Ta)O 3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm 2 irrespective of the laser wavelength.

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“…Indeed, by introducing the bcc-Fe buffer layer with thickness of ∼15 nm, the obtained values of T c for Co-doped Ba122 films on LSAT and MgO substrates increased by ∼2-4 K compared to those of films on bare these substrates. Additionally, the observed self-field J c in the Co-doped Ba122 films on the Fe buffer layer was 0.45 MA/cm 2 at 12 K, which was several times higher than that of the film on the bare LSAT substrate [57]. On the other hand, Katase et al demonstrated that the Co-doped Ba122 films with high T c and J c could be grown without any buffer layers only by the optimization of the PLD deposition condition [58].…”

Section: -Systemmentioning

confidence: 95%

Comparative Review on Thin Film Growth of Iron-Based Superconductors

2017

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Abstract:Since the discovery of the novel iron-based superconductors, both theoretical and experimental studies have been performed intensively. Because iron-based superconductors have a smaller anisotropy than high-T c cuprates and a high superconducting transition temperature, there have been a lot of researchers working on the film fabrication of iron-based superconductors and their application. Accordingly, many novel features have been reported in the films of iron-based superconductors, for example, the fabrication of the epitaxial film with a higher T c than bulk samples, the extraction of the metastable phase which cannot be obtained by the conventional solid state reaction, and so on. In this paper, we review the progress of research on thin film fabrications of iron-based superconductors, especially the four categories: LnFeAs(O,F) (Ln = Lanthanide), AEFe 2 As 2 (AE = Alkaline-earth metal), FeCh (Ch = Chalcogen), and FeSe monolayer. Furthermore, we focus on two important topics in thin films of iron-based superconductors; one is the substrate material for thin film growth on the iron-based superconductors, and the other is the whole phase diagram in FeSe 1−x Te x which can be obtained only by using film-fabrication technique.

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Scaling behavior of the critical current in clean epitaxialBa(Fe1−xCox)

Cited by 79 publications

References 23 publications

High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers

High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

Comparative Review on Thin Film Growth of Iron-Based Superconductors

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