Scaling analysis of diffusion-mediated island growth in surface adsorption processes

Bartelt, M. C.; Evans, James W.

doi:10.1103/physrevb.46.12675

Cited by 482 publications

(336 citation statements)

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“…In order to appropriately analyze such experimental data for the metal island or row size distribution, we first recall a central observation from recent analyses in nucleation theory. For island formation during deposition, simulation 11,12 and theory 12,13 indicate that the density ͑per site͒ of islands of size s ͑measured in atoms͒ satisfies the scaling relation…”

Section: Experimental Results and Analysismentioning

confidence: 99%

Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)

et al. 2005

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Deposition at room temperature of Ga on Si(100) produces single-atom-wide metal rows orthogonal to the Si-dimer rows. Detailed analysis using scanning tunneling microscopy reveals a monotonically decreasing size (i.e., length) distribution for these rows. This is unexpected for homogeneous nucleation without desorption, conditions which are operative in this system. Kinetic Monte Carlo simulation of an appropriate atomistic model indicates that this behavior is primarily a consequence of the feature that the capture of diffusing atoms is greatly inhibited in the Ga∕Si(100) system. The modeling also determines activation barriers for anisotropic terrace diffusion, and recovers the experimental distribution of metal rows. In addition, we analyze a variety of other generic deposition models and determine that the propensity for a large population of small islands in general reflects an enhanced nucleation rate relative to the aggregation rate. Disciplines Chemistry CommentsThis article is from Physical Review B 72 (2005) Deposition at room temperature of Ga on Si͑100͒ produces single-atom-wide metal rows orthogonal to the Si-dimer rows. Detailed analysis using scanning tunneling microscopy reveals a monotonically decreasing size ͑i.e., length͒ distribution for these rows. This is unexpected for homogeneous nucleation without desorption, conditions which are operative in this system. Kinetic Monte Carlo simulation of an appropriate atomistic model indicates that this behavior is primarily a consequence of the feature that the capture of diffusing atoms is greatly inhibited in the Ga/ Si͑100͒ system. The modeling also determines activation barriers for anisotropic terrace diffusion, and recovers the experimental distribution of metal rows. In addition, we analyze a variety of other generic deposition models and determine that the propensity for a large population of small islands in general reflects an enhanced nucleation rate relative to the aggregation rate.

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Section: Experimental Results and Analysismentioning

confidence: 99%

Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)

et al. 2005

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“…Both processes are expected to be associated with the formation of 'craters' or even the openings penetrating through the oxide toward the substrate surface [29,33,34]. Therefore, the rate constants K 3 and K 35 should be orders of magnitude lower than that given by the effective Ga diffusivities (σ 3 D 3 and σ 35 D 3 , with σ as the corresponding capture coefficients [35][36][37]). …”

Section: The Modelmentioning

confidence: 99%

“…Within the frame of the irreversible growth model, that is, with neglect of decay of both Ga-Ga and Ga-As surface dimers [35][36][37], the set of kinetic equations for the surface density of Ga droplets (N 3 ), parasitic GaAs islands (N 35 ) and Ga adatoms (n 3 ) can be written as Here, we assume that the kinetic growth constants are the same for differently sized surface clusters, as in [36] and [37]. The first equation shows that the number of Ga droplets increases due to the Ga-Ga dimerization, with K 3 n 3 2 as the nucleation rate in irreversible growth [37].…”

Section: The Modelmentioning

confidence: 99%

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

et al. 2015

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Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter and density is extremely important for high-efficient nanowire-based solar cells. In this work, we investigate mastering the diameter and density of self-catalyzed GaAs nanowires on Si(111) substrates by growth conditions using the self-assembly of Ga droplets. We introduce a new paradigm of the characteristic nucleation time controlled by group III flux and temperature that determine diameter and length distributions of GaAs nanowires. This insight into the growth mechanism is then used to grow nanowire forests with a completely tailored diameter-density distribution. We also show how the reflectivity of nanowire arrays can be minimized in this way. In general, this work opens new possibilities for the cost-effective and controlled fabrication of the ensembles of self-catalyzed III-V nanowires for different applications, in particular in next-generation photovoltaic devices.S Online supplementary data available from stacks.iop.org/NANO/26/105603/mmedia

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“…These are called limitedmobility models because the diffusion of a deposited atom, whenever possible, takes place in a restricted time interval before the deposition of another atom. More complex models involve the competition among deposition, diffusion and aggregation [14,15,16], being able to represent real systems' features quantitatively.…”

Section: A Interface Growthmentioning

confidence: 99%

Depinning transitions in interface growth models

Reis

2003

Braz. J. Phys.

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Pinning-depinning transitions are roughening transitions separating a growing phase and pinned (or blocked) one, and are frequently connected to transitions into absorbing states. In this review, we discuss lattice growth models exhibiting this type of dynamic transition. Driven growth in media with impurities, the competition between deposition and desorption and deposition of poisoning species are some of the physical mechanisms responsible for the transitions, leading to different types of stochastic growth rules. The growth models are classified according to the those mechanisms and possible applications are shown, which include suggestions of experimental realizations of directed percolation transitions. I IntroductionThe study of surface and interface growth processes attracts much interest from the technological point of view mainly because it helps to understand the growth mechanisms of nanostructures and, consequently, their physical properties [1]. From the theoretical point of view, they motivated significant advances in non-equilibrium Statistical Mechanics and related fields [2,3]. Theoretical modeling is usually based on stochastic differential equations or on discrete atomistic models. In various models, changing one parameter leads to a roughening transition between a rough and a smooth phase. Two well known examples are the transition in the Kardar-Parisi-Zhang equation in dimensions d ≥ 3, separating regimes with linear (smooth) and nonlinear growth, and temperature-induced roughening transitions in equilibrium conditions [2]. On the other hand, in the so-called depinning transitions, the interface propagates only in the rough phase, being pinned in the smooth phase. Several mechanisms may be responsible for this type of transition, such as the presence of impurities in the growth media, competition between deposition and evaporation or formation of poisoning species at the growing surface. One of the interesting features of depinning transitions is that they frequently can be mapped onto transitions into absorbing states, whose most prominent example is directed percolation (DP). Different connections of depinning transitions to DP are found in discrete and continuous growth models, as well as connections with other classes of transitions to absorbing states [4] and, eventually, with statistical equilibrium transitions. Besides the fundamental interest of these systems, the large variety of interface growth phenomena observed in nature suggests them as strong candidates to experimental realizations of models of dynamic transitions, such as DP (see e. g. Ref.[5]).The aim of the present work is to review the basic features of lattice growth models exhibiting depinning transitions. Before introducing these systems, we will briefly summarize the theory and phenomenology concerning interface growth and phase transitions into absorbing states (Sec. II). Then we will discuss the problem of growing interfaces in disordered media with quenched disorder, in which transitions in the DP class or in the cl...

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Scaling analysis of diffusion-mediated island growth in surface adsorption processes

Cited by 482 publications

References 17 publications

Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)

Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

Depinning transitions in interface growth models

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