Scaled-up Direct-Current Generation in MoS<sub>2</sub> Multilayer-Based Moving Heterojunctions

Li, Jun; Liu, Feifei; Bao, Rima; Jiang, Keren; Khan, Faheem; Li, Zhi; Peng, Huaichao; Chen, James M.; Alodhayb, Abdullah; Thundat, Thomas

doi:10.1021/acsami.9b09851

Cited by 62 publications

(60 citation statements)

References 33 publications

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“…The metal-semiconductor-based DC-TENG with low impedance of 620 Ω can produce an average open-circuit voltage of 20 mV and short-circuit current of 20 µA. Moreover, Liu et al [104] demonstrated DC output through various MoS 2 -based moving heterojunction including MS (metal-semiconductor), MIS (metal-insulator-semiconductor), and SIS (semiconductorinsulator-semiconductor), as shown in Figure 5e,f. In the MS contact, the output voltage and current up to 0.3 V and 0.6 µA will be produced, when MoS 2 rotates circularly on the Al substrate.…”

Section: Development Of Semiconductor-based Dc-tengs In Bulk Contactmentioning

confidence: 99%

“…[105] By sliding a carbon aerogel on a p-type Si wafer with a thin SiO 2 layer, a direct current of 15 µA and voltage of 2 V is obtained, which is much higher than other semiconductor-based DC system and sufficient for the practical applications. [90,101,104] Moreover, introducing transparent materials such as indium tin oxide (ITO), the performance of semiconductor-based DC system can be enhanced by coupling electric fields induced with irradiation and friction (Figure 5h). A prototype was developed using ITO glass as slider and Si wafer as the substrate to prove the feasibility.…”

Section: Development Of Semiconductor-based Dc-tengs In Bulk Contactmentioning

confidence: 99%

“…Thus, an opposite electrical signal is generated when the metal rubs against the p-type silicon because of the opposite built-in electric field (Figure 6c). In the MIS (MoS 2 -TiO 2 -Ti) DC system, Liu et al [104] considered that the principle of DC output is dynamic electronic excitation. Under friction, there will be an additional dynamic variation of interface charge (Δσ) compared to the static case due to the nonadiabatic electron excitation (Figure 6d).…”

Section: Working Mechanisms Of Semiconductor-based Dc-tengs In Bulk Cmentioning

confidence: 99%

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Direct Current Triboelectric Nanogenerators

Song

Wang

et al. 2020

Advanced Energy Materials

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become a more serious issue. [1-3] Efficient conversion of ambient neglected energy into electricity has been a research hotspot from last decade. [4-18] In particular, the triboelectric nanogenerator (TENG) based on coupling the contact electrification (CE) and electrostatic induction possesses incomparable superiority in harvesting low frequency and micro mechanical energy. [19-21] Various environmental based mechanical energy including human motion, [22-30] rotating motion, [31,32] vibration, [33-38] water drop, [39,40] sea wave, [41-44] and wind, [45-56] can be harvested effectively with TENGs. Moreover, the self-powered systems without external power supply, [57-59] can be built based on TENG, [60-68] which can be applied to environmental surveillance, [60-62] chemical detection, [62-64] tracking system, [65,66] liquid volume monitoring, [67] electronic skin, [68] etc. In conventional TENGs, a pulsed alternating current (AC) output is obtained by changing the distance or contact area periodically between the materials with opposite electrostatic charges. [69-73] In order to obtain direct current (DC) output, some necessary rectification methods are needed, such as power management circuits, [47,74-76] rectifier bridge, [77-82] and electric brushes, [83,84] which will reduce the portability and energy utilization efficiency. [85] Moreover, the pulsed AC output leads to a high crest factor (the ratio between the peak and the root-mean square value of output), which means the output is unstable. [86,87] These inherent output characteristics of the conventional TENGs can seriously affect its widespread applications in driving electronics and charging energy storage devices where DC output is most appropriate. In this case, the novel strategies and technologies for converting mechanical energy directly into DC electric energy are essential. Lately, various types of DC triboelectric nanogenerators (DC-TENGs) with new frictional materials and different structures are introduced. [88-91] The concept of DC-TENG as illustrated in Figure 1, describes that the mechanical energy is harvested and converted into constant DC electric power, which is suitable to power electronic equipment or charge energy storage devices. In the future, this promising research field will also attract more and more scientific efforts. The progress and development of DC-TENG is summarized in this paper, which begins with the development and working mechanisms of the insulator-based DC-TENG by phase coupling and dielectric breakdown. The DC voltage output of various insulator-based DC-TENGs can reach up to kV, and its crest factor is close to 1. Thereafter, the semiconductor-based DC-TENG with lower internal impedance and higher output current density is introduced. The charge transfer process in

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Section: Development Of Semiconductor-based Dc-tengs In Bulk Contactmentioning

confidence: 99%

Section: Development Of Semiconductor-based Dc-tengs In Bulk Contactmentioning

confidence: 99%

Section: Working Mechanisms Of Semiconductor-based Dc-tengs In Bulk Cmentioning

confidence: 99%

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Direct Current Triboelectric Nanogenerators

Song

Wang

et al. 2020

Advanced Energy Materials

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“…However, conventional TENGs usually use organic polymer insulation materials, and the charges generated by friction tends to accumulate on the surface of the material, resulting in an alternating output . Recently, semiconductor materials began to attract researchers' interest, and a series of work has made great progress: the tribotunneling nanogenerator based on sliding metal–insulator–semiconductor (MIS) structure, the moving Schottky diode based on metal–semiconductor (MS) structure, the triboelectric cell based on PN junction structure, and other moving heterojunction nanogenerator . Thundat and Liu et al realized an ultrahigh current density MIS nanogenerator due to quantum mechanical tunneling of the ultrathin natural oxide layer .…”

Section: Introductionmentioning

confidence: 99%

“…sliding metal-insulator-semiconductor (MIS) structure, [14][15][16][17] the moving Schottky diode based on metal-semiconductor (MS) structure, [18][19][20] the triboelectric cell based on PN junction structure, [21][22][23] and other moving heterojunction nanogenerator. [24] Thundat and Liu et al realized an ultrahigh current density MIS nanogenerator due to quantum mechanical tunneling of the ultrathin natural oxide layer. [14][15][16] Lin et al designed a moving Schottky diode generator with high current density output which is based on the built-in electric field separation.…”

mentioning

confidence: 99%

Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

Zhang

Jiang

Zhao

et al. 2020

Advanced Energy Materials

147

185

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The triboelectric nanogenerator (TENG) is a new energy technology that is enabled by coupled contact electrification and electrostatic induction. The conventional TENGs are usually based on organic polymer insulator materials, which have the limitations and disadvantages of high impedance and alternating output current. Here, a tribovoltaic effect based metal–semiconductor direct‐current triboelectric nanogenerator (MSDC‐TENG) is reported. The tribovoltaic effect is facilitated by direct voltage and current by rubbing a metal/semiconductor on another semiconductor. The frictional energy released by the forming atomic bonds excites nonequilibrium carriers, which are directionally separated to form a current under the built‐in electric field. The continuous average open‐circuit voltage (10–20 mV), short‐circuit direct‐current output (10–20 µA), and low impedance characteristic (0.55–5 kΩ) of the MSDC‐TENG can be observed during relative sliding of the metal and silicon. The working parameters are systematically studied for electric output and impedance characteristics. The results reveal that faster velocity, larger pressure, and smaller area can improve the maximum power density. The internal resistance is mainly determined by the velocity and the electrical resistance of semiconductor. This work not only expands the material candidates of TENGs from organic polymers to semiconductors, but also demonstrates a tribovoltaic effect based electric energy conversion mechanism.

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High‐Performance Flexible Schottky DC Generator via Metal/Conducting Polymer Sliding Contacts

Yang

Benner

Guo

et al. 2021

Adv Funct Materials

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Dynamic Schottky direct‐current (DC) generators hold great promise for ambient mechanical energy harvesting as it overcomes the low‐current output limitation in conventional approaches. However, the lack of a fundamental understanding of DC generation in conducting polymer‐based Schottky generators has hindered their application for self‐powered wearable and implantable electronics. Here, a high‐performance, flexible Schottky DC generator with metal/conducting polymer sliding contact system is demonstrated, which exhibits a large current density (J) up to 20 A m–2 for single contact geometry and a scaled‐up DC output reaching 200 µA (J = 0.73 A m–2) and 0.8 V. The design of flexibility in such a Schottky DC generator is inherited from the long‐chain polymer concept, leading to the demonstration of a variety of device configuration of free‐standing thin film, supported thin film and nanocomposite prototype toward practical applications. It is revealed that the sliding junctions may exhibit a different mechanical energy conversion mechanism compared to the compressive conducting polymer Schottky junctions. It is also proven that the magnitude and polarity of DC generation is determined by the Schottky contact formation and interfacial electric field. The concept of a flexible Schottky generator not only shows great promise for next‐generation, self‐powered wearable devices, but also provides potential mechanisms for developing novel wearable sensors.

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Scaled-up Direct-Current Generation in MoS₂ Multilayer-Based Moving Heterojunctions

Cited by 62 publications

References 33 publications

Direct Current Triboelectric Nanogenerators

Direct Current Triboelectric Nanogenerators

Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

High‐Performance Flexible Schottky DC Generator via Metal/Conducting Polymer Sliding Contacts

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Scaled-up Direct-Current Generation in MoS2 Multilayer-Based Moving Heterojunctions

Cited by 62 publications

References 33 publications

Direct Current Triboelectric Nanogenerators

Direct Current Triboelectric Nanogenerators

Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

High‐Performance Flexible Schottky DC Generator via Metal/Conducting Polymer Sliding Contacts

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Product

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Scaled-up Direct-Current Generation in MoS₂ Multilayer-Based Moving Heterojunctions