Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template

Abstract

Lin et al. report 2D layered materials as a soft template for symmetry-mismatched epitaxial growth of PbSe/Bi2Se3 heterostructures.

Unconventional solution-phase epitaxial growth of organic-inorganic hybrid perovskite nanocrystals on metal sulfide nanosheets

“…It has been known that to realize epitaxial heterostructures, a small misfit in both lattice symmetry and lattice parameters is usually required to achieve a minimum interfacial energy. Some exceptions have also been reported especially in recent cases of using van der Waals layered materials as substrates which are free from surface dangling bonds to effectively tolerate strains arising from a large symmetry/lattice mismatch [49][50][51][52][53]. Examples include recent demonstrations of epitaxial overgrowth of Pt(101) on MoS 2 (001) [49] and PbSe(001) on Bi 2 Se 3 (001) [50].…”

“…Some exceptions have also been reported especially in recent cases of using van der Waals layered materials as substrates which are free from surface dangling bonds to effectively tolerate strains arising from a large symmetry/lattice mismatch [49][50][51][52][53]. Examples include recent demonstrations of epitaxial overgrowth of Pt(101) on MoS 2 (001) [49] and PbSe(001) on Bi 2 Se 3 (001) [50]. Similarly, in our present work, the epitaxial deposition of MAPbBr 3 on MoS 2 with four-fold and six-fold symmetry at the interface, repectively, was realized in solution.…”

“…Similarly, in our present work, the epitaxial deposition of MAPbBr 3 on MoS 2 with four-fold and six-fold symmetry at the interface, repectively, was realized in solution. This can be due to the dangling-bond-free surfaces of MoS 2 nanosheets, and their soft/flexible nature when dispersed in solution to tolerate the large symmetry mismatch [50]. For comparison, we carried out a control experiment by directly mixing pre-synthesized MAPbBr 3 NCs and MoS 2 nanosheets.…”

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

“…Transition metal dichalcogenide (TMD) semiconductors, such as MoS 2 and WS 2 , became popular materials in recent years, because they usually have intrinsic bandgaps and an indirect-to-direct bandgap transition from bulk to monolayer limit [2][3][4][5][6]. Although graphene and TMDs are promising materials in field-effect devices [7][8][9], their heterostructures are more advanced in charge-splitting functions for the applications in optoelectronic devices [10][11][12][13][14][15]. In these heterostructure devices, graphene has been utilized as an effective electrode to reduce the contact resistance in 2D semiconductor devices due to its ultra-flat surface, high carrier mobility, and gate-tunable Fermi level.…”

A Generalized Strategy for the Synthesis of Large‐Size Ultrathin Two‐Dimensional Metal Oxide Nanosheets

“…[6] However, the binding energy of the core level of oxygen for all the six 2D MO nanosheets also shows a0.1-1.8 eV shift to lower values (Figure 3; Supporting Information, Table S3), which also means oxygen exhibits ar eduction (electron gain) state instead of oxidization (electron given). Therefore,e lectron transfer from oxygen to metals is not the primary reason for the unique chemical state of the 2D nanosheets.Here,lattice distortion (Supporting Information, Figure S8) and extra chemical bond formation (Supporting Information , Figure S9), which have been demonstrated as effective ways to redistribute the electron density, [14,16] also occur in the surface atoms of our ultrathin 2D MO nanosheets.T he lattice…”