Scalable self-assembled reduced graphene oxide transistors on flexible substrate

Abstract

Articles you may be interested inManipulation of graphene work function using a self-assembled monolayer J. Appl. Phys. 116, 084312 (2014)

Band-like transport in highly crystalline graphene films from defective graphene oxides

“…Note that the carrier (hole) mobilities in the rGO films prepared by ethanol treatment show significantly higher values than in the rGO films prepared by H 2 /Ar treatment. The highest observed mobility reached ~210 cm 2 /Vs at room temperature (~270 cm 2 /Vs at 77 K), which is higher than the carrier mobilities (0.06–95 cm 2 /Vs) of the rGO films prepared by other reduction methods 5 15 16 17 18 19 . The ethanol treatment at a high process temperature effectively improved the carrier mobility of the rGO films.…”

Basal-Plane Functionalization of Chemically Exfoliated Molybdenum Disulfide by Diazonium Salts

“…HRTEM imaging was then performed on an FEI Titan TEM operated at 300 kV. The network transistor devices based on region-selective assembly of CE-MoS 2 were prepared in analogy to reference 53 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 32 and -4 |e| excess charge) substrates have been compared. An energy correction for multipole error in Hartree potential has been added.…”

A facile approach to synthesize an oxo-functionalized graphene/polymer composite for low-voltage operating memory devices

“…To figure out the function of the outer shell of polymer, we made a comparison to a device, in which the oxo-G 1 /DA/PSEO composite layer is replaced by an oxo-G 1 layer without any wrapping, which is assembled by a selfassembled process. 11,53 Alternatively, we replaced the composite layer with an oxo-G 1 /DA layer. The transfer performances of the two devices are shown in Figure 6D and 6E respectively.…”

“…This kind of special SAM has shown a good performance in such FET configurations. 11,63 The composite dispersion of oxo-G 1 /DA/PSEO is then spin-coated on the sample at a speed of 500 rpm. The sexithiophene derivative, a,a 0 -didecylsexithiophene (Dec-6T-Dec), is used as the active channel material, with a thickness of 30 nm.…”

“…for wearable electronics. [8][9][10][11] Graphene is also used for electrodes and active transistor channel materials and it plays an important role in constructing nanoelectronic memory devices. 3 Especially in the latter, graphene can be introduced as a floating gate, in which the carriers are stored during the operation of the memory device.…”