Scalable preparation and characterization of GaN nanopowders with high crystallinity by soluble salts-assisted route

Lv, Yingying; Yu, Leshu; Ai, Wenwen; Li, Chungen

doi:10.1007/s11051-014-2619-4

Cited by 2 publications

(2 citation statements)

References 24 publications

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“…Transition metal nitrides are of great interest in various industry applications 1,2 including packaging materials for semiconductors 3,4 , coatings for high-speed alloy cutting 5 , and high-temperature structural ceramics for nuclear materials 6 , etc., owing to their excellent physical, chemical, and mechanical properties 7–9 . Among them, zirconium nitride exhibits high hardness (~15 GPa) 10 , high melting point (2980 ± 50 °C), good thermal conductivity (45–50 W/mK) 11 , low electrical resistivity 12 , good abrasive resistance 13 and good corrosion resistance.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Zirconium Nitride Nanopowders by Internal Gelation and Carbothermic Nitridation

Zhao

et al. 2019

Sci Rep

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Zirconium compounds has been widely attention over the last decades due to its excellent physical and chemical properties. Zirconium nitride nanopowders were synthesized via a simple direct carbothermic nitridation process of internal gel derived zirconia in the presence of nano-sized carbon black. The effects of reaction temperature, dwell time and molar ratio of carbon black to Zr (C/Zr) on the phase composition, grain size and crystal parameters of products were studied. Based upon the analysis of crystallite phase evolution and microstructure characterization, it was found that zirconium oxynitride is intermediate product and then O atoms in oxynitride were extracted by oxygen getter, carbon black. Anion sites were directly replaced by N atoms to form rock-salt type nitride in carbothermic nitridation process.

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Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Zirconium Nitride Nanopowders by Internal Gelation and Carbothermic Nitridation

Zhao

et al. 2019

Sci Rep

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“…GaN nanoparticles with mean diameter of

were produced in a large scale with a high yield (95.8%) through a direct nitridation reaction. Na

was also utilized as a dispersant [ 86 ] in the soluble salt-assisted technique. Large scaled high-crystalline GaN nanoparticles were produced through a direct nitridation of Ga-Na

mixture at 750–950

.…”

Section: Syntheses Of Gan Nanoparticlesmentioning

confidence: 99%

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Lan

Wong‐Ng

et al. 2016

Micromachines

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Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.40.277778emnormale-0.21251ptnormalV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.

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Scalable preparation and characterization of GaN nanopowders with high crystallinity by soluble salts-assisted route

Cited by 2 publications

References 24 publications

Synthesis and Characterization of Zirconium Nitride Nanopowders by Internal Gelation and Carbothermic Nitridation

Synthesis and Characterization of Zirconium Nitride Nanopowders by Internal Gelation and Carbothermic Nitridation

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

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