Abstract:Monodisperse Cu2ZnSnS4 (CZTS) nanocrystals were prepared by a facile, high yield, scalable and high concentration heating-up procedure. An efficient mixing and heat transfer in the reaction mixture using intensive argon bubbling and a careful control of the heating ramp stability were key parameters to minimize the nanocrystal size distribution. Optimized synthesis conditions allowed the production of several grams of highly monodisperse CZTS nanocrystals per batch, with a 5wt% concentration and a yield above … Show more
“…57 However, it was repeatedly reported that Cu-based NCs typically have tightly bound amines bound to the surface. 13,58 It should however be noted that OLA is quite easily desorbed during purification suggesting only a moderate binding affinity for the NC surface, in line with L-type ligand behaviour. To facilitate charge transport/transfer, CASe NCs were thoroughly purified by multiple precipitation/re-dispersion steps and subsequently treated with NH 4 SCN, which could efficiently displace remaining OLA.…”
Section: Resultsmentioning
confidence: 88%
“…[1][2][3][4][5][6][7] Beyond the best studied ternary and quaternary Cu-Ga-In, [8][9][10] Cu-Zn-Sn, [11][12][13][14][15] Cu-Zn-Ge 16,17 compounds, some I−V−VI tetrahedrally coordinated semiconductors also offer excellent functional properties, but remain largely underexplored. In particular, Cu 3 SbSe 4 (CASe) is a semiconductor with a relatively small direct band gap of 0.3 eV and a defect-related carrier density on the order of 10 18 cm -3 at ambient temperature.…”
Copper-based chalcogenides that comprise abundant, low-cost, and environmental friendly elements are excellent materials for a number of energy conversion applications, including photovoltaics, photocatalysis, and thermoelectrics (TE). In such applications, the use of solution-processed nanocrystal (NC) to produce thin films or bulk nanomaterials has associated several potential advantages, such as high material yield and throughput, and composition control with unmatched spatial resolution and cost. Here we report on the production of Cu3SbSe4 (CASe) NCs with tuned amounts of Sn and Bi dopants. After proper ligand removal, as monitored by nuclear magnetic resonance and infrared spectroscopies, these NCs were used to produce dense CASe bulk nanomaterials for solid state TE energy conversion. By adjusting the amount of extrinsic dopants, dimensionless TE figures of merit (ZT) up to 1.26 at 673 K were reached. Such high ZT values are related to an optimized carrier concentration by Sn doping, a minimized lattice thermal conductivity due to efficient phonon scattering at point defects and grain boundaries, and to an increase of the Seebeck coefficient obtained by a modification of the electronic band structure with the Bi doping. Nanomaterials were further employed to fabricate ring-shaped TE generators to be coupled to hot pipes and which provided 20 mV and 1 mW per TE element when exposed to a 160 °C temperature gradient. The simple design and good thermal contact associated with the ring geometry and the potential low cost of the material solution processing may allow the fabrication of TE generators with short payback times.Peer ReviewedPostprint (author's final draft
“…57 However, it was repeatedly reported that Cu-based NCs typically have tightly bound amines bound to the surface. 13,58 It should however be noted that OLA is quite easily desorbed during purification suggesting only a moderate binding affinity for the NC surface, in line with L-type ligand behaviour. To facilitate charge transport/transfer, CASe NCs were thoroughly purified by multiple precipitation/re-dispersion steps and subsequently treated with NH 4 SCN, which could efficiently displace remaining OLA.…”
Section: Resultsmentioning
confidence: 88%
“…[1][2][3][4][5][6][7] Beyond the best studied ternary and quaternary Cu-Ga-In, [8][9][10] Cu-Zn-Sn, [11][12][13][14][15] Cu-Zn-Ge 16,17 compounds, some I−V−VI tetrahedrally coordinated semiconductors also offer excellent functional properties, but remain largely underexplored. In particular, Cu 3 SbSe 4 (CASe) is a semiconductor with a relatively small direct band gap of 0.3 eV and a defect-related carrier density on the order of 10 18 cm -3 at ambient temperature.…”
Copper-based chalcogenides that comprise abundant, low-cost, and environmental friendly elements are excellent materials for a number of energy conversion applications, including photovoltaics, photocatalysis, and thermoelectrics (TE). In such applications, the use of solution-processed nanocrystal (NC) to produce thin films or bulk nanomaterials has associated several potential advantages, such as high material yield and throughput, and composition control with unmatched spatial resolution and cost. Here we report on the production of Cu3SbSe4 (CASe) NCs with tuned amounts of Sn and Bi dopants. After proper ligand removal, as monitored by nuclear magnetic resonance and infrared spectroscopies, these NCs were used to produce dense CASe bulk nanomaterials for solid state TE energy conversion. By adjusting the amount of extrinsic dopants, dimensionless TE figures of merit (ZT) up to 1.26 at 673 K were reached. Such high ZT values are related to an optimized carrier concentration by Sn doping, a minimized lattice thermal conductivity due to efficient phonon scattering at point defects and grain boundaries, and to an increase of the Seebeck coefficient obtained by a modification of the electronic band structure with the Bi doping. Nanomaterials were further employed to fabricate ring-shaped TE generators to be coupled to hot pipes and which provided 20 mV and 1 mW per TE element when exposed to a 160 °C temperature gradient. The simple design and good thermal contact associated with the ring geometry and the potential low cost of the material solution processing may allow the fabrication of TE generators with short payback times.Peer ReviewedPostprint (author's final draft
“…The spectra has been deconvoluted to gain a better understanding of the different phases present in the material and changes in their relative intensity with changes in the precursor ratio. The peaks at ~334 cm -1 and ~287 cm -1 are the primary and secondary characteristic peaks for kesterite CZTS phase respectively [32][33][34]. The peaks at ~358 cm -1 and ~657 cm -1 can be attributed to ZnS [33,35] while the peak at ~471 cm -1 belongs to Cu2-xS [33], both of which are unwanted secondary phases.…”
“…The peaks at ~334 cm -1 and ~287 cm -1 are the primary and secondary characteristic peaks for kesterite CZTS phase respectively [32][33][34]. The peaks at ~358 cm -1 and ~657 cm -1 can be attributed to ZnS [33,35] while the peak at ~471 cm -1 belongs to Cu2-xS [33], both of which are unwanted secondary phases. As the quantity of the sulfur precursor is increased, the intensity of the peaks indicating kesterite CZTS phase increase while those for the secondary phases of ZnS and Cu2-xS decrease.…”
Thin films of Cu2ZnSnS4 (CZTS) were synthesized via a low cost, wet chemical technique of chemical bath deposition (CBD). In the first part of this study, the chemical composition ratio S/(Cu+Zn+Sn) was varied keeping Cu/(Zn + Sn) and Zn/Sn ratios constant to study the effect of sulfur variation. Detailed electrical and optical characterization has been carried out using UV-Vis spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, Raman spectroscopy and Kelvin probe force microscopy (KPFM) techniques. The results of the present study confirm that near ideal stoichiometry could be achieved in CZTS by adding excess thiourea in a controlled manner which eliminates the need for the normally used post-synthesis and high temperature sulfurization step. Using the stoichiometric sample as the basis, in the second part of the study Cu/(Zn+Sn) and Zn/Sn was varied and it was found that the electronic properties of CZTS in terms of band gap, work function and valence band edge position could be controlled by precursor variation. The Cu-poor, Zn-rich samples showed a better photoresponse which has been attributed to a decrease in the CuZn type defects. The study thus demonstrates a scalable and low-cost technique to grow CZTS absorber layers for solar cells with control over its electronic properties which is important for effective device operation.
“…From this we expected to obtain insights into the interplay of nanoparticle surface curvature and block copolymer interfacial curvature on the self-assembled morphology.W ec hose poly(styrene-b-isoprene) (PS-PI) block copolymers because their phase behavior has been wellestablished. [19] Theb lock copolymer molecular weights,c ompositions as well as the diameters of the nanoparticles are given in Table 1. PEHA shows strong coordinative binding,but still possesses sufficient surface mobility to reach high grafting densities.…”
The defined assembly of nanoparticles (NPs) in polymer matrices is an important prerequisite for nextgeneration functional materials.Apromising approacht o control NP positions in polymer matrices at the nanometer scale is the use of blockc opolymers.I ta llows the selective deposition of NPs in nanodomains,b ut the final defined and ordered positioning of the NPs within the domains has not been possible.T his can nowb ea chieved by coating NPs with blockc opolymers.T he self-assembly of blockc opolymercoated NPs directly leads to ordered microdomains containing ordered NP arrays with exactly one NP per unit cell. By variation of the grafting density,the inter-nanoparticle distance can be controlled from direct NP surface contact to surface separations of several nanometers,determined by the thickness of the polymer shell. The method can be applied to aw ide variety of blockc opolymers and NPs and is thus suitable for abroad range of applications.The defined assembly of functional nanoparticles in polymer matrices is highly desirable for the development of nextgeneration electrical, optical, memory,and energy conversion devices. [1] Currently,t he lack of ap recise control of nanoparticle positions,d istances,a nd ordering in polymeric matrices is as evere barrier for many nanotechnology applications as these parameters sensibly determine mechanical, dielectric, magnetic, and plasmonic coupling as well as energy transfer in the active polymer matrices of the corresponding devices.Aversatile method to control nanoparticle locations and arrangements at the nanometer scale is the use of block copolymers. [2] ForABdiblock copolymers,nanoparticles can be selectively integrated into the AorBdomains,orinto the A/B interface. [3] Early studies aiming at ad omain selective integration involved either the synthesis of nanoparticles from precursors solubilized in the respective block copolymer domains,o ru sed pre-synthesized nanoparticles. [4] Later improved methods employed nanoparticles which were surface compatibilized with the targeted polymer domain.However,t he controlled and stable incorporation of inorganic nanoparticles into polymer matrices remains difficult, because nanoparticles are thermodynamically immiscible with polymers.This is due to 1) unfavorable nanoparticle/ polymer enthalpic interactions,a nd 2) ac onsiderable loss of conformational entropy when polymer chains are located close to the nanoparticle surface. [5] Theenthalpic interactions can be minimized by nanoparticle surface compatibilization with either polymer-compatible small molecules [6] or with polymers of the same type as the targeted block copolymer domain. As the conformational entropy of block copolymer chains is already reduced owing to their confinement at the domain interface,a dditional entropy losses owing to nanodomain incorporation immediately lead to problems of macrophase separation already at small volume fractions of nanoparticles. [7] By using small molecules with attractive interactions such as hydrogen bonding [8] and ioni...
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