Scalable energy-efficient magnetoelectric spin–orbit logic

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Lin, Chia Ching; Gosavi, Tanay A.; Liu, Huichu; Prasad, Bhagwati; Huang, Ying; Bonturim, Everton; Ramesh, R.; Young, Ian A.

doi:10.1038/s41586-018-0770-2

Cited by 548 publications

(468 citation statements)

References 67 publications

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“…for our system, that shows a perfect match with the experimental data. It is worth to emphasize that the downscaling of the FM width, in addition to the enhancement of the output current, also favors the reduction of the switching energy in the MESO device 4 .…”

Section: Fig 3 Favorable Scaling Law For the Spin-to-charge Conversmentioning

confidence: 99%

Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

et al. 2020

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Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories.Modern computing transistor technology is scaled to tens of nanometers 1 in lateral dimensions driven by the favorable miniaturization (Moore's Law) 2 . Such a favorable miniaturization 3 is an essential requirement for enabling spin logic 4-7 in computing but it has so far been a missing focus in spintronics. In particular, energy efficient detection of the magnetic state at the nanoscale dimensions is an important step to realize spin logic devices for computing. Up to now, magnetic state sensing techniques have relied on magnetoresistances such as anisotropic magnetoresistance (AMR) 8 , giant magnetoresistance (GMR) 9,10 , colossal magnetoresistance (CMR) 11 , and tunneling magnetoresistance (TMR) 12 . Even if TMR has been steadily improved to large values (>1000%) 13 , the magnetoresistance techniques are unfavorable in terms of energy for sensing a magnetic state because the resistance of the device increases quadratically when scaling down the area of the device 14 . Also, importantly, magnetoresistance techniques cannot generate an electromotive force (i.e., an electric current) that can be used to drive another circuit element, a requirement for a

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Section: Fig 3 Favorable Scaling Law For the Spin-to-charge Conversmentioning

confidence: 99%

Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

et al. 2020

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“…Certainly, both E and P are polar vectors, and behave identical under various symmetry operationssimilar with the identical behavior of magnetic field (H) and magnetization (M). In addition to p-n junctions, numerous technological devices such as optical isolators, spin current diodes or metamaterials do utilize nonreciprocal effects.Multiferroics, where ferroelectric and magnetic orders coexist, has attracted an enormous attention in recent years because of the cross-coupling effects between magnetism and ferroelectricity, and the related possibility of controlling magnetism with an electric field (and vice versa) [13][14][15]. Magnetic order naturally breaks time reversal symmetry, and a magnetic lattice, combined with a crystallographic lattice, can have broken space inversion symmetry, leading to multiferroicity, called magnetism-driven ferroelectricity.…”

mentioning

confidence: 99%

“…Multiferroics, where ferroelectric and magnetic orders coexist, has attracted an enormous attention in recent years because of the cross-coupling effects between magnetism and ferroelectricity, and the related possibility of controlling magnetism with an electric field (and vice versa) [13][14][15]. Magnetic order naturally breaks time reversal symmetry, and a magnetic lattice, combined with a crystallographic lattice, can have broken space inversion symmetry, leading to multiferroicity, called magnetism-driven ferroelectricity.…”

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confidence: 99%

SOS: symmetry-operational similarity

Cheong

2019

npj Quantum Mater.

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Symmetry often governs condensed matter physics. The act of breaking symmetry spontaneously leads to phase transitions, and various observables or observable physical phenomena can be directly associated with broken symmetries. Examples include ferroelectric polarization, ferromagnetic magnetization, optical activities (including Faraday and magneto-optic Kerr rotations), second harmonic generation, photogalvanic effects, nonreciprocity, various Hall-effect-type transport properties, and multiferroicity. Herein, we propose that observable physical phenomena can occur when specimen constituents (i.e., lattice distortions or spin arrangements, in external fields or other environments, etc.) and measuring probes/quantities (i.e., propagating light, electrons or other particles in various polarization states, including vortex beams of light and electrons, bulk polarization or magnetization, etc.) share symmetry operational similarity (SOS) in relation to broken symmetries. In addition, quasi-equilibrium electronic transport processes such as diode-type transport effects, linear or circular photogalvanic effects, Hall-effect-type transport properties ((planar) Hall, Ettingshausen, Nernst, thermal Hall, spin Hall, and spin Nernst effects) can be understood in terms of symmetry operational systematics. The power of the SOS approach lies in providing simple and physically transparent views of otherwise unintuitive phenomena in complex materials. In turn, this approach can be leveraged to identify new materials that exhibit potentially desired properties as well as new phenomena in known materials.will limit our discussion to the central, often one-dimensional (1D), cases that are pictorially succinct and intuitive, applicable to numerous different materials, and most relevant to observables or observable physical phenomena.When the motion of an object in one direction is different from that in the opposite direction, it is called a nonreciprocal directional dichroism or simply a nonreciprocal effect [7][8][9]. The object can be an electron, a phonon, spin wave, or light in crystalline solids, and the best known example is that of nonreciprocal charge transport (i.e., diode) effects in p-n junctions, where a built-in electric field (E) breaks the directional symmetry [10]. The polarization (P) of ferroelectrics such as BiFeO3 or polar semiconductors such as BiTeBr can also act like the built-in electric field, so bulk diode (and photovoltaic) effects can be realized in these materials [11,12]. Certainly, both E and P are polar vectors, and behave identical under various symmetry operationssimilar with the identical behavior of magnetic field (H) and magnetization (M). In addition to p-n junctions, numerous technological devices such as optical isolators, spin current diodes or metamaterials do utilize nonreciprocal effects.Multiferroics, where ferroelectric and magnetic orders coexist, has attracted an enormous attention in recent years because of the cross-coupling effects between magnetism and ferroelectricity, and the ...

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“…Recently, a spin logic based on magneto-electric switching and the Inverse Rashba Edelstein effect was proposed in ref. 11. In the present paper, we not only demonstrate that our proposed logic-device can function as XNOR, NAND and NOR gate based on the configuration but also show that easy cascadability can be achieved by using minimal number of CMOS devices.…”

mentioning

confidence: 50%

“…Though, clocking is necessary for functioning of the proposed gates, it has been used in almost all non-volatile spin logic to reduce leakage power consumption611.…”

Section: Me Logic Family and Cascadabilitymentioning

confidence: 99%

MESL: Proposal for a Non-volatile Cascadable Magneto-Electric Spin Logic

Jaiswal

Roy

2017

Sci Rep

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In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and fast switching of nano-magnets using the magneto-electric (ME) effect. In this paper, we propose a voltage driven logic-device based on the ME induced switching of nano-magnets. We further demonstrate that the proposed logic-device, which exhibits decoupled read and write paths, can be used to construct a complete logic family including XNOR, NAND and NOR gates. The proposed logic family shows good scalability with a quadratic dependence of switching energy with respect to the switching voltage. Further, the proposed logic-device has better robustness against the effect of thermal noise as compared to the conventional current driven switching of nano-magnets. A device-to-circuit level coupled simulation framework, including magnetization dynamics and electron transport model, has been developed for analyzing the present proposal. Using our simulation framework, we present energy and delay results for the proposed Magneto-Electric Spin Logic (MESL) gates.

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Scalable energy-efficient magnetoelectric spin–orbit logic

Cited by 548 publications

References 67 publications

Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

SOS: symmetry-operational similarity

MESL: Proposal for a Non-volatile Cascadable Magneto-Electric Spin Logic

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