Scalable creation of silicon-vacancy color centers in diamond by ion implantation through a 1-$μ$m pinhole
L. Hunold,
S. Lagomarsino,
A. M. Flatae
et al.
Abstract:The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, we present the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond by ion implantation. The lateral position of the SiV is spatially controlled by a 1-µm pinhole placed in front of the sample, which can be moved nanometer precise using a piezo stage. The initial implantation position is controlled by monitoring the ion beam position with a… Show more
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