Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation

Mukherjee, Chhandak; Raya, Christian; Ardouin, Bertrand; Deng, Mingke; Fregonèse, Sébastien; Zimmer, Thomas; Nodjiadjim, Virginie; Riet, M.; Dupuy, Jean-Yves; Luisier, Mathieu; Quan, Wei; Arabhavi, Akshay M.; Bolognesi, C.R.; Maneux, Cristell

doi:10.1109/ted.2018.2876551

Cited by 15 publications

(15 citation statements)

References 18 publications

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“…The new technology generation shows a similar f T compared to the previous generation [34]. The reduction in the transit time with emitter width scaling has been observed at high current densities, which can be attributed to a pronounced collector current spreading in smaller emitter dimensions [34], leading to larger critical current and smaller transit time values. Small emitter dimension particularly poses a challenge to maintain an acceptable current gain (β), of which rather low (15)(16)(17)(18)(19)(20) values have been reported for the 0.13 µm InP HBT process [1,33].…”

Section: Extrapolation Of Figures Of Merits To State-of-the-art (013mentioning

confidence: 65%

“…The extrapolated f T and f MAX are compared with that of the 0.13 × 2 µm 2 state-of-the-art for a V CE of 1 V. The predicted peak f T [ Figure 22a] shows that a higher value can be expected compared to the reported value for the experimental devices [33]. The new technology generation shows a similar f T compared to the previous generation [34]. The reduction in the transit time with emitter width scaling has been observed at high current densities, which can be attributed to a pronounced collector current spreading in smaller emitter dimensions [34], leading to larger critical current and smaller transit time values.…”

Section: Extrapolation Of Figures Of Merits To State-of-the-art (013mentioning

confidence: 97%

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Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

et al. 2021

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This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Through the implementation of accurate and SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible compact models of uni-traveling carrier photodiodes (UTC-PDs) and InP double heterojunction bipolar transistors (DHBTs), we demonstrated that the next generation of THz technologies for beyond-5G networks requires (i) a multi-physical understanding of their operation described through electrical, photonic and thermal equations, (ii) dedicated test structures for characterization in the frequency range higher than 110 GHz, (iii) a dedicated parameter extraction procedure, along with (iv) a circuit reliability assessment methodology. Developed on the research and development activities achieved in the past two decades, we detailed each part of the multiphysics design optimization approach while ensuring technology power loss management through a holistic procedure compatible with existing software tools and design flow for the timely and cost-effective achievement of THz OEICs.

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Section: Extrapolation Of Figures Of Merits To State-of-the-art (013mentioning

confidence: 65%

Section: Extrapolation Of Figures Of Merits To State-of-the-art (013mentioning

confidence: 97%

Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

et al. 2021

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“…Low-frequency S-parameters have been measured on 7 device geometries [3] using the measurement setup described in section II. Fig.…”

Section: Compact Model Validationmentioning

confidence: 99%

“…The capacitance, COPEN, corresponds to the device open capacitance and is quite low (typically, around a few fF). Transient simulations were performed with HiCuM model using a fully calibrated model card for the InGaAs/InP DHBTs [3], taking in account, additionally, the proposed thermal network model. The transient simulations are performed under the bias conditions VBE=0.85V and VCE=1.2 V for the geometry 0.7×5 µm 2 , with an applied pulse width of 500ns and a pulse delay of 200ns.…”

Section: Validation With Pulse Measurementmentioning

confidence: 99%

“…Due to the shift of DC operating points to higher current densities to operate at peak-fT in miniaturized advanced and cutting-edge technologies, self-heating and thermal instabilities are the key factors limiting reliable device operation. Particularly for InGaAs/InP DHBTs, operating conditions around and beyond peak-fT have been observed to exhibit significant self-heating [3]. Therefore, alongside scaling, there have been significant efforts to reduce electrothermal effect by reducing the thermal impedance (ZTH) of the transistors [4].…”

Section: Introductionmentioning

confidence: 99%

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Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications

Mukherjee

Couret

Nodjiadjim

et al. 2019

IEEE Trans. Electron Devices

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In this work we report a new scalable model for the thermal impedance of III-V DHBTs that has been developed based on the physics of heat diffusion within the HBT architecture. The heat flows through both the emitter metal layers and towards the substrate are taken into account for the model development. The model constitutes of individual thermal contributions of the different regions of the intrinsic device and metal layers. On-wafer low-frequency S-parameters measurements have been performed on several device geometries to study the device dynamic self-heating. The model has been validated against the measurements showing good accuracy and scalability. Time domain pulse measurements have also been performed to correlate with the frequency domain S-parameter measurements.

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Phase decomposition in the Ni–InGaAs system at high annealing temperature

Oueldna,

Perrin-Pellegrino,

Portavoce

et al. 2023

J Mater Sci

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Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation

Cited by 15 publications

References 18 publications

Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications

Phase decomposition in the Ni–InGaAs system at high annealing temperature

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