Scalable compact modeling for SiGe HBTs suitable for microwave radar applications

Lehmann, Steffen; Weiß, M.; Zimmermann, Y.; Pawlak, Andreas; Aufinger, Klaus; Schröter, M.

doi:10.1109/sirf.2011.5719339

Cited by 7 publications

(3 citation statements)

References 10 publications

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“…The nonlinearity of the temperature distribution due to e.g. mutual inter device coupling (MTC) can be modeled with distributed compact models as applied in [15]. However, it is a very simple method for circuit designers to improve the accuracy of their simulation, if advanced thermal coupled models are not available or not applicable due to e.g.…”

Section: Discussionmentioning

confidence: 99%

Characterization of mutual heating inside a SiGe ring oscillator

Weis

Santorelli

Ghosh

et al. 2012

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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This paper reports on the electrical and thermal characterization of a state of the art SiGe ring oscillator (RO) with 2.2 ps gate delay fabricated in a Si/SiGe:C technology featuring f T and f max of ~300 GHz and ~400 GHz, respectively. The transistor model is verified through DC and RF characteristics taken from the same die as the circuit measurements. Excellent agreement between measurements and compact model simulation is shown. A simple method is presented that calculates the nonlinear circuit temperature rise in the local circuit area resulting from mutual heating of all active and passive components. Once taken into account the circuit temperature, the accuracy of circuit simulation is significantly improved.

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Section: Discussionmentioning

confidence: 99%

Characterization of mutual heating inside a SiGe ring oscillator

Weis

Santorelli

Ghosh

et al. 2012

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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“…Eventually, a large amount of power is dissipated in the base-collector junctions of all the fingers. Since, the fingers are thermally coupled through the common substrate (although electrically isolated by shallow trenches), modeling of such transistors requires accurate estimation of both self-heating in each finger and thermal coupling among the fingers [2], [3], [4], [5]. In order to develop a reliable thermal model, accurate characterization of thermal resistances and junction temperatures for all the fingers is of utmost importance.…”

Section: Introductionmentioning

confidence: 99%

Extraction of True Finger Temperature From Measured Data in Multifinger Bipolar Transistors

Gupta

Nidhin

Balanethiram

et al. 2021

IEEE Trans. Electron Devices

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In this brief, we propose a step-by-step strategy to accurately estimate the finger temperature in a silicon based multi-finger bipolar transistor structure from conventional measurements. First we extract the nearly zero-power self-heating resistances (R th,ii (Ta)) and thermal coupling factors (cij(Ta)) at a given ambient temperature. Now, by applying the superposition principle on these variables at nearly zero-power, where the linearity of the heat diffusion equation is preserved, we estimate an effective thermal resistance (R th,i (Ta)) and the corresponding revised finger temperature Ti(Ta). Finally, the Kirchhoff's transformation on Ti(Ta) yields the true temperature at each finger (Ti(Ta, P d )). The proposed extraction technique automatically includes the effects of back-end-of-line metal layers and different types of trenches present within the transistor structure. The technique is first validated against 3D TCAD simulation results of bipolar transistors with different emitter dimensions and then applied on actual measured data obtained from state-of-the-art multi-finger SiGe HBT from STMicroelectronics B5T technology. It is observed that the superposition of raw measured data at around 40 mW power underestimates the true finger temperature by around 10%.

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“…Similarly, a self-consistent iterative approach to systematically evaluate both the upward and downward heat flow from the heat source was presented in [13]. However, only very few attempts have been made to physically model the thermal coupling effect [14][15][16]. In a multifinger transistor system with n number of fingers, the total rise in junction temperature above the ambient temperature (T amb ) for the ith finger is given as [15,16],…”

Section: Introductionmentioning

confidence: 99%

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

et al. 2020

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In this part, we propose a step-by-step strategy to model the static thermal coupling factors between the fingers in a silicon based multifinger bipolar transistor structure. First we provide a physics-based formulation to find out the coupling factors in a multifinger structure having no-trench isolation (cij,nt). As a second step, using the value of cij,nt, we propose a formulation to estimate the coupling factor in a multifinger structure having only shallow trench isolations (cij,st). Finally, the coupling factor model for a deep and shallow trench isolated multifinger device (cij,dt) is presented. The proposed modeling technique takes as inputs the dimensions of emitter fingers, shallow and deep trench isolations, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are validated against 3D TCAD simulations of multifinger bipolar transistors with and without trench isolations. Geometry scalability of the model is also demonstrated.

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Scalable compact modeling for SiGe HBTs suitable for microwave radar applications

Cited by 7 publications

References 10 publications

Characterization of mutual heating inside a SiGe ring oscillator

Characterization of mutual heating inside a SiGe ring oscillator

Extraction of True Finger Temperature From Measured Data in Multifinger Bipolar Transistors

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

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