Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance &gt; 10¹¹

Miura, S.; Nishioka, K.; Naganuma, Hiroshi; Nguyen, Thu-Thuy; Honjo, Haruo; Ikeda, Shoji; Watanabe, Takahito; Inoue, Hirofumi; Niwa, Miki; Tanigawa, T.; Noguchi, Y.; Yoshizuka, Toru; Yasuhira, M.; Endoh, Tetsuo

doi:10.1109/ted.2020.3025749

Cited by 26 publications

(15 citation statements)

References 22 publications

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“…The construction of the Double-MTJ employed in this work is depicted in Figure 1 a. MgO makes up the tunnel barrier and the cap layer, while CoFeB makes up the free layer. The additional CoFeB/MgO interface raises the energy barrier of STT-MTJ [ 25 ].…”

Section: Spin-transfer Torque Magnetic Tunnel Junctions and E-spinmentioning

confidence: 99%

“…The temperature, which is determined by the surroundings and operating conditions, has a direct impact on the switching frequency for thermal disturbance MTJ (p-bit) [ 16 ]. However, the E-spin, based on Double-MTJ and having a greater thermal stability factor ∆ [ 25 ], could counteract the probability skew brought on by temperature variation. Because of this, our proposed electrical operation to adjust probability has better stability.…”

Section: Spin-transfer Torque Magnetic Tunnel Junctions and E-spinmentioning

confidence: 99%

“…By precisely controlling the current, the dependability and accuracy of the E-spin are considerably enhanced. Additionally, Double-MTJ arrays can be incorporated thanks to the scalability of spin-torque switching, offering significant prospects for novel spintronics-based large-scale integrated circuits [ 25 ].…”

Section: Spin-transfer Torque Magnetic Tunnel Junctions and E-spinmentioning

confidence: 99%

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E-Spin: A Stochastic Ising Spin Based on Electrically-Controlled MTJ for Constructing Large-Scale Ising Annealing Systems

et al. 2023

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With its unique computer paradigm, the Ising annealing machine has become an emerging research direction. The Ising annealing system is highly effective at addressing combinatorial optimization (CO) problems that are difficult for conventional computers to tackle. However, Ising spins, which comprise the Ising system, are difficult to implement in high-performance physical circuits. We propose a novel type of Ising spin based on an electrically-controlled magnetic tunnel junction (MTJ). Electrical operation imparts true randomness, great stability, precise control, compact size, and easy integration to the MTJ-based spin. In addition, simulations demonstrate that the frequency of electrically-controlled stochastic Ising spin (E-spin) is 50 times that of the thermal disturbance MTJ-based spin (p-bit). To develop a large-scale Ising annealing system, up to 64 E-spins are implemented. Our Ising annealing system demonstrates factorization of integers up to 264 with a temporal complexity of around O(n). The proposed E-spin shows superiority in constructing large-scale Ising annealing systems and solving CO problems.

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Section: Spin-transfer Torque Magnetic Tunnel Junctions and E-spinmentioning

confidence: 99%

Section: Spin-transfer Torque Magnetic Tunnel Junctions and E-spinmentioning

confidence: 99%

Section: Spin-transfer Torque Magnetic Tunnel Junctions and E-spinmentioning

confidence: 99%

See 1 more Smart Citation

E-Spin: A Stochastic Ising Spin Based on Electrically-Controlled MTJ for Constructing Large-Scale Ising Annealing Systems

et al. 2023

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“…Solutions to improve the endurance of STT-MRAM have also been studied with regard to the impact of process integration and fabrication impact, accounting for the effects of process steps such as etching, encapsulation, and annealing [9], [10], [11], [14], [15]. Further solutions to improve STT-MRAM endurance include increasing the write efficiency [16] and enhancing the thermal stability [17]. It is increasingly evident that the MgO breakdown is driven by multiple mechanisms [18], [19].…”

Section: Introductionmentioning

confidence: 99%

Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction

Tan

Lim

Sikder

et al. 2023

IEEE Trans. Electron Devices

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Time-dependent dielectric breakdown (TDDB) lifetime of ultrathin (1 nm) MgO in spin-transfer torque magnetoresistive random access memory (STT-MRAM) devices has recently been shown to be driven by factors other than voltage alone. This study focuses on the specific role of asymmetry in the current flow for different polarity pulsing modes of voltage stress on the TDDB lifetime of 1-nm MgO. Numerical analysis, based on a 3-D heat-diffusion equation and spintronic simulations, has been performed to characterize the temperature rise in the devices for precise correction of self-heating to obtain a correct interpretation of MgO TDDB. It is shown that the different lifetimes for the positive and negative modes can be attributed to different temperature increases arising from self-heating. While the positive and negative modes displayed a non-Arrhenius behavior, the bipolar mode showed an Arrhenius trend in which we observed a unique bimodal behavior of TDDB activation energy (E a ) as a function of stress voltage in the ultrathin MgO stack. We discuss the role of additional driving forces, such as current, self-heating, charge trapping, and interface strain governing the breakdown mechanism along with the voltage effect.

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“…MRAM technology is undergoing intense competition against other nonvolatile memory technologies like SRAM, Flash, PRAM, FeRAM, and RRAM in terms of their latency, density, and cost. [7][8][9] It has succeeded at present due to its very high endurance, low power demand, and high reliability, 8 arising from the absence of atomic motion during operation. However, the ultimate scaling performances in any technology need not correspond to the present-day leader.…”

Section: Introductionmentioning

confidence: 99%

Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe,Co magnetic tunnel junctions

Robertson

Naganuma

2021

Applied Physics Reviews

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Magnetic tunnel junctions (MTJ) with MgO/Fe based interfaces and out-of-plane spin direction form the basis of present-day spin-transfertorque magnetic random-access memory (STT-MRAM) devices. They are a leading type of nonvolatile memory due to their very long endurance times and lack of reliability problems. Many semiconductor devices, such as the field effect transistor or nonvolatile memories, have undergone fundamental changes in materials design as dimensional scaling has progressed. Here, we consider how the future scaling of the MTJ dimensions might affect materials choices and compare the performance of different tunnel barriers, such as 2D materials like h-BN with the existing MgO tunnel barriers. We first summarize key features of MgO-based designs of STT-MRAM. We then describe general aspects of the deposition of 2D materials and h-BN on metals. We compare the band structures of MgO and h-BN with their band gaps corrected for the GGA band error. The different absorption sites of h-BN on Fe or Co are compared in terms of physisorbtive or chemisorbtive bonding sites and how this affects their spin-polarized bands and the transmission magneto-resistance (TMR). The transmission magnetoresistance is found to be highest for the physisorptive sites. We look at how these changes would affect the overall TMR and how scaling might progress.

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Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹

Cited by 26 publications

References 22 publications

E-Spin: A Stochastic Ising Spin Based on Electrically-Controlled MTJ for Constructing Large-Scale Ising Annealing Systems

E-Spin: A Stochastic Ising Spin Based on Electrically-Controlled MTJ for Constructing Large-Scale Ising Annealing Systems

Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction

Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe,Co magnetic tunnel junctions

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