Sb2Se3 thin film solar cells in substrate configuration and the back contact selenization

Li, Zhiqiang; Chen, Xu; Zhu, Hongbing; Chen, Jingwei; Guo, Yuting; Zhang, Chong; Zhang, Wen; Niu, Xiaofei; Mai, Yaohua

doi:10.1016/j.solmat.2016.11.033

Cited by 182 publications

(124 citation statements)

References 33 publications

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“…Furthermore, the increase of IPCE value within the Sb 2 (S x Se 1‐ x ) 3 region (from 600 to 900 nm) upon incorporation of CdS layer in c‐CdS and c‐TiO 2 /c‐CdS devices can be assigned to either a passivation of surface trap states at the electron buffer/Sb 2 (S x Se 1‐ x ) 3 interface or protection of Sb 2 (S x Se 1‐ x ) 3 film from oxidation, which is discussed later. The IPCE drop observed between 400 and 500 nm observed in c‐CdS solar cells is similar to previous results that is a consequence of the parasitic absorption of CdS layer. The integrated J sc,INT values calculated from IPCE data were found to be consistent with the J sc values resulted from photovoltaic characterization, as listed in Table S1.…”

Section: Resultssupporting

confidence: 91%

Influence of the electron buffer layer on the photovoltaic performance of planar Sb₂(S_xSe_1‐x)₃ solar cells

Jaramillo-Quintero

Rincón

Vásquez-García

et al. 2018

Progress in Photovoltaics

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Appropriate selection of electron buffer layer and understanding its impact on the photo‐generated charge transfer dynamics at the interfaces are critical to enhance the efficiency of solar cells. By optimizing a multilayer electron buffer composed of CdS thin film deposited on TiO2 compact layer, we obtained a power conversion efficiency (PCE) of 5.47% for a planar solar cell of Sb2(SxSe1‐x)3 absorber. The PCE was significantly enhanced in the photovoltaic parameters of planar solar cells fabricated with single‐layer configuration: for example, PCE of 3.99% and 0.79% were obtained when either CdS or TiO2, respectively, were used. Surface photovoltage spectroscopy, transient photovoltage, and electrochemical impedance spectroscopy analyses indicated that the PCE improvement can be ascribed to a combination of 2 factors: (i) better separation and transfer of the photo‐excited free charge, provided by the beneficial energy level alignment between TiO2 and CdS layers, and (ii) sulfur passivation upon incorporation of CdS in a multilayer configuration causing a reduction in the trap states at the interface with Sb2(SxSe1‐x)3.

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Section: Resultssupporting

confidence: 91%

Influence of the electron buffer layer on the photovoltaic performance of planar Sb₂(S_xSe_1‐x)₃ solar cells

Jaramillo-Quintero

Rincón

Vásquez-García

et al. 2018

Progress in Photovoltaics

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“…By optimizing the selenization temperature, Sb 2 Se 3 films show a large grain size of ≈1 µm, a carrier density of ≈1.31 × 10 13 cm −3 and a high hole mobility of 21.88 cm −2 V −1 s −1 . The best performing devices achieved an efficiency of 3.47% with an open circuit voltage of 0.414 V. Recently, Mai and coworkers achieved Sb 2 Se 3 films by cothermal evaporation of Sb 2 Se 3 and Se powder and fabricated Sb 2 Se 3 solar cells in a substrate device configuration . A digital photograph of Sb 2 Se 3 thin film solar cells in a substrate configuration is shown in Figure a.…”

Section: Antimony Chalcogenide Solar Cellsmentioning

confidence: 99%

Section: Antimony Chalcogenide Solar Cellsmentioning

confidence: 99%

Review of Recent Progress in Antimony Chalcogenide‐Based Solar Cells: Materials and Devices

et al. 2019

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Antimony chalcogenides such as Sb2S3, Sb2Se3, and Sb2(SxSe1−x)3 have emerged as very promising alternative solar absorber materials due to their high stability, abundant elemental storage, nontoxicity, low‐cost, suitable tunable bandgap, and high absorption coefficient. Remarkable achievements have been made in antimony chalcogenide solar cells in the past few decades, with the power conversion efficiency (PCE) currently reaching 9.2%, which is close to the PCE level required for industrial applications. To facilitate the realization of highly efficient antimony chalcogenide solar cells in the future, a comprehensive review of antimony chalcogenide‐based materials and photovoltaic devices is presented. First, the fundamental physical properties and preparation methods of antimony chalcogenide‐based materials are outlined, and then, notable recent developments in antimony chalcogenide‐based photovoltaic devices with various architectures are highlighted. Finally, the most prominent limitations are described, and approaches to achieving remarkable advances in antimony chalcogenide solar cells in the future are provided.

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“…The essentially increased V bi contribute to enhance the built‐in electric field, which decreases the charge accumulation at electrode interfaces under illumination. As a result, an increase in V oc can be achieved in K, Rb, and Cs‐doped Sb 2 S 3 solar cells . While smaller V bi values corresponding to more interfacial accumulation of photogenerated charge carriers cause reduction of V oc in the devices based on Li‐ and Na‐doped Sb 2 S 3 films …”

Section: Resultsmentioning

confidence: 99%

Alkali Metals Doping for High‐Performance Planar Heterojunction Sb₂S₃ Solar Cells

et al. 2018

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Sb2S3 as a stable light harvesting material has received increasing attention for solar cell applications. To improve the device efficiency, much effort has been put into the materials synthesis, interfacial engineering, and device structure design. Here, it is demonstrated that doping of alkali metal (Li, Na, K, Rb, Cs) ions essentially affects the morphological, crystal, optical and electrical properties of Sb2S3 films. The structural and compositional analysis shows that the doping is in form of alkali metal‐sulfur chemical bond at both surface and grain boundaries of Sb2S3 films. Compared with the pristine Sb2S3, we observe that Li and Na doping are not able to improve the device efficiency, while K, Rb, and Cs notably increase energy conversion efficiency. The most effective enhancement is found in Cs‐doped Sb2S3, where the carrier concentration, crystallinity, and film formability show remarkable improvement. The device based on the Cs‐Sb2S3 film delivers a power conversion efficiency of 6.56%, which is the highest efficiency in planar heterojunction Sb2S3 solar cells, regardless of whether the films are fabricated by a solution process or thermal deposition. This research identifies that doping of heavy alkali metals is an effective approach to improve the performance of Sb2S3 solar cells.

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Sb2Se3 thin film solar cells in substrate configuration and the back contact selenization

Cited by 182 publications

References 33 publications

Influence of the electron buffer layer on the photovoltaic performance of planar Sb₂(S_xSe_1‐x)₃ solar cells

Influence of the electron buffer layer on the photovoltaic performance of planar Sb₂(S_xSe_1‐x)₃ solar cells

Review of Recent Progress in Antimony Chalcogenide‐Based Solar Cells: Materials and Devices

Alkali Metals Doping for High‐Performance Planar Heterojunction Sb₂S₃ Solar Cells

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Sb2Se3 thin film solar cells in substrate configuration and the back contact selenization

Cited by 182 publications

References 33 publications

Influence of the electron buffer layer on the photovoltaic performance of planar Sb2(SxSe1‐x)3 solar cells

Influence of the electron buffer layer on the photovoltaic performance of planar Sb2(SxSe1‐x)3 solar cells

Review of Recent Progress in Antimony Chalcogenide‐Based Solar Cells: Materials and Devices

Alkali Metals Doping for High‐Performance Planar Heterojunction Sb2S3 Solar Cells

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Influence of the electron buffer layer on the photovoltaic performance of planar Sb₂(S_xSe_1‐x)₃ solar cells

Influence of the electron buffer layer on the photovoltaic performance of planar Sb₂(S_xSe_1‐x)₃ solar cells

Alkali Metals Doping for High‐Performance Planar Heterojunction Sb₂S₃ Solar Cells